Fei Comapny

Anthony Graupera

Sean Kellogg

Shouyin Zhang

Mark Utlaut

N William Parker

Tom Miller

Andrew B Wells

Charles Otis

Gregory A Schwind

Noel S Smith

Mostafa Maazouz

Walter Skoczylas

Antonius Bastianus Wilhelmus Dirriwachter

Dustin Laur

Thomas Gary Miller

James B McGinn

William N Parker

Sean Kellog

Theresa Holtermann

Michael Dibattista

Mark W Utlaut

James Mcginn

Antonius Basitianus Wilhelmus Dirriwachter

Tom Dirriwachter

Applicants have found that energetic neutral particles created by a charged exchange interaction between high energy ions and neutral gas molecules reach the sample in a ion beam system using a plasma source. The energetic neutral create secondary electrons away from the beam impact point. Methods to solve the problem include differentially pumped chambers below the plasma source to reduce the opportunity for the ions to interact with gas.

Imaging and processing for plasma ion source

An inductively coupled plasma source having multiple gases in the plasma chamber provides multiple ion species to a focusing column. A mass filter allows for selection of a specific ion species and rapid changing from one species to another.

Plasma ion source for use with a focused ion beam column with selectable ions

An inductively coupled plasma charged particle source for focused ion beam systems includes a plasma reaction chamber with a removably attached source electrode. A fastening mechanism connects the source electrode with the plasma reaction chamber and allows for a heat-conductive, vacuum seal to form. With a removable source electrode, improved serviceability and reuse of the plasma source tube are now possible.

Method for attachment of an electrode into an inductively-coupled plasma

An openable gas passage provides for rapid pumpout of process or bake out gases in an inductively coupled plasma source in a charged particle beam system. A valve, typically positioned in the source electrode or part of the gas inlet, increases the gas conductance when opened to pump out the plasma chamber and closes during operation of the plasma source.

Methods and structures for rapid switching between different process gases in an inductively-coupled plasma (ICP) ion source

Inductively-coupled plasma ion source for use with a focused ion beam column with selectable ions

System for attachment of an electrode into a plasma source

An inductively-coupled plasma source for a focused charged particle beam system includes a conductive shield that provides improved electrical isolation and reduced capacitive RF coupling and a dielectric fluid that insulates and cools the plasma chamber. The conductive shield may be enclosed in a solid dielectric media. The dielectric fluid may be circulated by a pump or not circulated by a pump. A heat tube can be used to cool the dielectric fluid.

Encapsulation of electrodes in solid media

A split grid multi-channel secondary particle detector for a charged particle beam system includes a first grid segment and a second grid segment, each having independent bias voltages creating an electric field such that the on-axis secondary particles that are emitted from the target are directed to one of the grids. The bias voltages of the grids can be changed or reversed so that each grid can be used to detect the secondary particles and the multi-channel particle detector as a whole can extend its lifetime.

On-axis detector for charged particle beam system

A focused ion beam (FIB) system is disclosed, comprising an inductively coupled plasma ion source, an insulating plasma chamber containing the plasma, a conducting source biasing electrode in contact with the plasma and biased to a high voltage to control the ion beam energy at a sample, and a plurality of apertures. The plasma within the plasma chamber serves as a virtual source for an ion column comprising one or more lenses which form a focused ion beam on the surface of a sample to be imaged and/or FIB-processed. The plasma is initiated by a plasma igniter mounted near or at the column which induces a high voltage oscillatory pulse on the source biasing electrode. By mounting the plasma igniter near the column, capacitive effects of the cable connecting the source biasing electrode to the biasing power supply are minimized. Ion beam sputtering of the apertures is minimized by proper aperture materials selection.

Plasma igniter for an inductively coupled plasma ion source

Encapsulation of electrodes in solid media for use in conjunction with fluid high voltage isolation

A method for performing milling and imaging in a focused ion beam (FIB) system employing an inductively-coupled plasma ion source, wherein two sets of FIB system operating parameters are utilized: a first set representing optimized parameters for operating the FIB system in a milling mode, and a second set representing optimized parameters for operating in an imaging mode. These operating parameters may comprise the gas pressure in the ICP source, the RF power to the ICP source, the ion extraction voltage, and in some embodiments, various parameters within the FIB system ion column, including lens voltages and the beam-defining aperture diameter. An optimized milling process provides a maximum milling rate for bulk (low spatial resolution) rapid material removal from the surface of a substrate. An optimized imaging process provides minimized material removal and higher spatial resolutions for improved imaging of the substrate area being milled.

Charged particle beam system having multiple user-selectable operating modes

A microscopic metallic structure is produced by creating or exposing a patterned region of increased conductivity and then forming a conductor on the region using electrodeposition. In some embodiments, a microscopic metallic structure is formed on a substrate, and then the substrate is etched to remove the structure from the substrate. In some embodiments, a focused beam of gallium ion without a deposition precursor gas scans a pattern on a silicon substrate, to produce a conductive pattern on which a copper structure is then formed by electrochemical deposition of one or more metals. The structure can be freed from the substrate by etching, or can used in place. A beam can be used to access an active layer of a transistor, and then a conductor can be electrodeposited to provide a lead for sensing or modifying the transistor operation while it is functioning.

Method to direct pattern metals on a substrate

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Hillsboro, OR, United States of America

Anthony Graupera