Sarda Technologies, Inc.

Other

Freebird Semiconductor Corporation

Anthony G P Marini

Bogdan M Duduman

John Kenneth Fogg

William R Richards, Jr

William E Batchelor

Greg J Miller

Richard H Baker

James L Vorhaus

James L Larrauri

Krista K Finigan

Simon P Wainwright

Max Zafrani

The present disclosure presents a circuit, a method, and a system to drive a half-bridge switch using depletion (D) mode compound semiconductor (III-V) switching transistors for a DC-DC converter using at least one driver to drive the switches of the circuit. Also included is at least one charge pump electrically connected to a gate of the transistor, to maintain a voltage that holds the transistor in an off-state. The circuit includes AC coupling capacitors to level shift a voltage and realize fast transistor switching.

Gate driver for depletion-mode transistors

Embodiments of the present disclosure relate to a multi-function circuit. The circuit comprises a low side circuit that is comprised with a first set of enhancement mode transistors. The half bridge circuit also includes a high side circuit that is comprised of a second set of transistors. Each of the enhancement mode transistors of the first set and second set of enhancement mode transistors are Gallium Nitride (GaN) transistors. In some embodiments, the GaN transistors are High Electron Mobility Transistors (HEMTs). In additional embodiments, the GaN transistors are configured and operated as saturated switches. In further embodiments, the half bridge circuit is designed as a discrete circuit. Additionally, each of the first set and second set of transistors, diodes, resistors, and all passive elements are discrete components arranged to form a half bridge circuit. In fact, the entire half bridge circuit is built from discrete components.

Multi-function power control circuit using enhancement mode gallium nitride (GaN) high electron mobility transistors (HEMTs)

Various aspects of the technology provide for clamping a transient from a transient generator in a circuit using a Field Effect Transistor (FET) including a compound semiconductor layer forming a drain coupled to the transient voltage generator, a source, and a gate. The gate and the drain may be configured to clamp voltage transients in the circuit from the transient voltage generator independent of a clamping diode between the source and the drain. The FET may be a depletion mode type fabricated using germanium or a compound semiconductor such as gallium arsenide (GaAs) or gallium nitride (GaN).

Self clamping FET devices in circuits using transient sources

This invention is related generally to detachable assemblies and more particularly to novel hardware for easily attaching or removing portable members from stationary structures. A quick acting fastener assembly is described for attaching a portable member, such as a toilet seat, to a stationary member, such as a toilet bowl, for example. The portable member carries a pair of headed pins fixed to the margin thereof and projecting outward to mate with receptacles on the stationary member. Said pins and the mating receptacles are of a unique design such that when the pins are inserted into the matching receptacles the portable member is securely fastened to the stationary member, yet can be removed, disengaged, without any adjustments (levers pulled, fasteners removed, etc.). The distinguishing feature of this invention is in the simplicity of the mechanical hardware, the absence of moving parts, springs, fasteners, levers, or removable nuts, etc.

Detachable toilet seat

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Clinton, MA, United States of America

Anthony G P Marini