Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Anthony De Luca

Christelle Charpin-Nicolle

Pierre Montmeat

Arnaud Garnier

Daniel Mermin

Sophie Bernasconi

Laetitia Castagne

A serigraphy method for producing a soulder bump on the front surface of a substrate includes: forming a film on the front surface, forming an opening in the film, filling the opening with a souldering material, and removing the film. Forming a film on the front surface is preceded by the formation of an intermediate layer between the film and the front surface, the intermediate layer being adapted to exhibit a force of adherence at one and/or the other interface formed with the first front surface and the film lower than the force of adherence that can be formed between the film and the first front surface.

Method for producing a solder bump on a substrate surface

A method for manufacturing a memory cell includes forming a stack of layers comprising a first electrode and a dielectric layer, and forming a second electrode. Forming the second electrode includes depositing the second electrode on the dielectric layer, and defining the contour of the second electrode in such a way that the second electrode forms a protruding element above the dielectric layer having inclined flanks, the angle between the flanks of the second electrode forming an acute angle with the plane wherein the dielectric layer mainly extends.

Method for producing a resistive memory cell

A method of manufacturing a spacer for an electronic memory including a substrate; a first gate structure; a stack including a plurality of layers whereof at least one of the layers is able to store electric charges, the method including depositing a spacer material layer, at least on the area covered by the stack; ion beam machining the spacer material layer, the ion beam machining being carried out with controlled stopping so as to preserve a residual portion of the thickness of the spacer material layer covering the stack; plasma etching the residual portion of the thickness of the spacer material layer.

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Claix, France

Anthony De Luca