International Business Machines Corporation

Globalfoundries Inc.

Anthony D Polson

David James Hathaway

Jerry D Hayes

Peter Anton Habitz

Eric A Foreman

Laura S Chadwick

James A Culp

Theodoros Anemikos

Steven Frederick Oakland

Gary Douglas Grise

Jeffrey H Oppold

Philip S Stevens

Susan K Lichtensteiger

Pascal A Nsame

Sebastian Theodore Ventrone

Kerry Bernstein

Ying Liu

Dirk Pfeiffer

Peilin Song

Robert L Wisnieff

Jeanne P Bickford

Franco Stellari

David E Lackey

Tad Jeffrey Wilder

Nancy H Pratt

David F Heidel

Douglas S Dewey

Michael Richard Quellette

Jeanne P Spence Bickford

Disclosed is an integrated circuit (IC) chip with a built-in self-test (BIST) architecture that allows for in the field accelerated stress testing. The IC chip can comprise an embedded processor, which selectively alternates operation of an on-chip test block between a stress mode and a test mode whenever the IC chip is powered-on such that, during the stress mode, the test block operates at a higher voltage level than an on-chip functional block and such that, during the test mode, the test block operates at a same voltage level as the functional block and is subjected to testing. Also disclosed are a system, method and computer program product which access the results of such testing from IC chips in a variety of different types of products in order model IC chip performance degradation and to generate IC chip end of life predictions specific to the different types of products.

On-going reliability monitoring of integrated circuit chips in the field

An emission map of a circuit to be tested for alterations is obtained by measuring the physical circuit to be tested. An emission map of a reference circuit is obtained by measuring a physical reference circuit or by simulating the emissions expected from the reference circuit. The emission map of the circuit to be tested is compared with the emission map of the reference circuit, to determine presence of alterations in the circuit to be tested, as compared to the reference circuit.

Detecting chip alterations with light emission

Mechanisms are provided for characterizing long range variability in integrated circuit manufacturing. A model derivation component tests one or more density pattern samples, which are a fabricated integrated circuits having predetermined pattern densities and careful placement of current-voltage (I-V) sensors. The model derivation component generates one or more empirical models to establish range of influence of long range variability effects in the density pattern sample. A variability analysis component receives an integrated circuit design and, using the one or more empirical models, analyzes the integrated circuit design to isolate possible long range variability effects in the integrated circuit design.

Characterization of long range variability

Methods for analyzing the timing in integrated circuits and for reducing the pessimism in timing slack calculations in static timing analysis (STA). The methods involve grouping and canceling the delay contributions of elements having similar delays in early and late circuit paths. An adjusted timing slack is calculated using the delay contributions of elements having dissimilar delays. In some embodiments, the delay contributions of elements having dissimilar delays are root sum squared. Embodiments of the invention provide methods for reducing the pessimism due to both cell-based and wire-dependent delays. The delays considered in embodiments of the invention may include delays due to the location of elements in a path.

Method and system for evaluating timing in an integrated circuit

Disclosed is a method of laying out individual cells of an integrated circuit design, based at least in part on the known polysilicon perimeter densities of those cells. That is, the method embodiments use the knowledge of polysilicon perimeter density for known cells to drive placement of those cells on a chip (i.e., to drive floor-planning). The method embodiments can be used to achieve approximately uniform across-chip polysilicon perimeter density and, thereby to limit performance parameter variations between functional devices that are attributable to variations in polysilicon perimeter density. Alternatively, the method embodiments can be used to selectively control variations in the average polysilicon perimeter density of different regions of a chip and, thereby to selectively control certain performance parameter variations between functional devices located in those different regions.

Method of laying out integrated circuit design based on known polysilicon perimeter densities of individual cells

A system and method is provided for optimizing semiconductor power by integration of physical design timing and product performance measurements. The method includes: establishing a timing run and identifying a sigma code for the timing run; establishing ring oscillator bins and respective code; identifying a required timing run for a second level assembly to satisfy a selected voltage bin; timing a product using the required timing run; testing a ring oscillator of the product using the timing to obtain physical design identification; recording the physical design identification and the sigma code for the timing run; and using the recorded physical design identification and the sigma code to set a voltage for the product to optimize power.

System and method to optimize semiconductor power by integration of physical design timing and product performance measurements

A method, system and program product are disclosed for improving an IC design that prioritize failure coefficients of slacks that lead to correction according to their probability of failure. With an identified set of independent parameters, a sensitivity analysis is performed on each parameter by noting the difference in timing, typically on endpoint slacks, when the parameter is varied. This step is repeated for every independent parameter. A failure coefficient is then calculated from the reference slack and the sensitivity of slack for each of the timing endpoints and a determination is made as to whether at least one timing endpoint fails a threshold test. Failing timing endpoints are then prioritized for modification according to their failure coefficients. The total number of runs required is one run that is used as a reference run, plus one additional run for each parameter.

Slack sensitivity to parameter variation based timing analysis

A method and service of balancing delay in a circuit design begins with nodes that are to be connected together by a wiring design, or by being supplied with an initial wiring design that is to be altered. The wiring design will have many wiring paths, such as a first wiring path, a second wiring path, etc. Two or more of the wiring paths are designed to have matching timing, such that the time needed for a signal to travel along the first wiring path is about the same time needed for a signal to travel along the second wiring path, the third path, etc. The method/service designs one or all of the wiring paths to make the paths traverse wire segments of about the same length and orientation, within each wiring level that the first wiring path and the second wiring path traverse. Also, this process makes the first wiring path and the second wiring path traverse the wire segments in the same order, within each wiring level that the first wiring path and the second wiring path traverse.

Method of generating wiring routes with matching delay in the presence of process variation

Disclosed are embodiments of forming an integrated circuit with a desired decoupling capacitance and with the uniform and targeted across-chip polysilicon perimeter density. The method includes laying out functional blocks to form the circuit according to the design and also laying out one or more decoupling capacitor blocks to achieve the desired decoupling capacitance. Then, local polysilicon perimeter densities of the blocks are determined and, as necessary, the decoupling capacitor blocks are reconfigured in order to adjust for differences in the local polysilicon perimeter densities. This reconfiguring is performed in a manner that essentially maintains the desired decoupling capacitance. Due to the across-chip polysilicon perimeter density uniformity, functional devices in different regions of the chip will exhibit limited performance parameter variations (e.g., limited threshold voltage variations). Also disclosed herein are embodiments of an integrated circuit structure formed according to the method embodiments and a design structure for the integrated circuit.

Integrated circuit with uniform polysilicon perimeter density, method and design structure

A method and circuits for testing an integrated circuit at functional clock frequency by providing a test controller generating control signals that assure proper latching of test patterns in scan chains at tester frequency and propagation of the test pattern through logic circuits being tested at functional clock frequency.

Functional frequency testing of integrated circuits

A method of optimizing power usage in an integrated circuit design analyzes multiple operating speed cut points that are expected to be produced by the integrated circuit design. The operating speed cut points are used to divide identically designed integrated circuit devices after manufacture into relatively slow integrated circuit devices and relatively fast integrated circuit devices. The method selects an initial operating speed cut point to minimize a maximum power consumption level of the relatively slow integrated circuit devices and the relatively fast identically designed integrated circuit devices. The method then manufactures the integrated circuit devices using the integrated circuit design and tests operating speeds and power consumption levels of the identically designed integrated circuit devices. Then, the method adjusts the initial operating speed cut point to a final operating speed cut point based on the testing, to minimize the maximum power consumption level of the relatively slow integrated circuit devices and the relatively fast integrated circuit devices.

Method of optimizing power usage of an integrated circuit design by tuning selective voltage binning cut point

IC chip design modeling using perimeter density to an electrical characteristic correlation is disclosed. In one embodiment, a method may include determining a perimeter density of conductive structure within each region of a plurality of regions of an integrated circuit (IC) chip design; correlating a measured electrical characteristic within a respective region of an IC chip that is based on the IC chip design to the perimeter density; and modeling the IC chip design based on the correlation.

IC chip design modeling using perimeter density to electrical characteristic correlation

A system and method for dynamically managing movement of semaphore data within the system. The system includes, but is no limited to, a plurality of functional units communicating over the network, a memory device communication with the plurality of functional units over the network, and at least one semaphore storage unit communicating with the plurality of functional unites and the memory device over the network. The plurality of functional units include a plurality of functional unit memory locations. The memory device includes a plurality of memory device memory locations. The at least one semaphore storage unit includes a plurality of semaphore storage unit memory locations. The at least one semaphore storage unit controls dynamic movement of the semaphore data among the plurality of functional unit memory locations, the plurality of memory device memory locations, the plurality of semaphore storage unit memory locations, and any combinations therof.

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Jericho, VT, United States of America

Anthony D Polson