L'air Liquide, Soci&#xe9;t&#xe9; Anonyme Pour L'etude Et L'exploitation Des Proc&#xe9;d&#xe9;s Georges Claude

L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des

Anthony Correia-Anacleto

Nicolas Blasco

Audrey Pinchart

Andreas Zauner

Ziyun Wang

A method for forming a tantalum-containing layer on a substrate, the method comprising at least the steps of: wherein:

Method of forming a tantalum-containing layer on a substrate

Disclosed are methods for forming a metal-containing layer on a substrate. A vapor comprising at least one precursor compound selected from the group consisting of (Cp)V(=NtBu)(NEt); (Cp)V(=NtBu)(NMe); (Cp)V(=NtBu)(NEtMe); (Cp)V(&#x2550;NiPr)(NEt); (Cp)V(&#x2550;NiPr)(NMe); (Cp)V(&#x2550;NiPr)(NEtMe); (Cp)V(&#x2550;NCH)(NEt); (Cp)V(&#x2550;NCH)(NMe); (Cp)V(&#x2550;NCH)(NEtMe); (Cp)Nb(=NtBu)(NEt); (Cp)Nb(=NtBu)(NMe); (Cp)Nb(=NtBu)(NEtMe); (Cp)Nb(&#x2550;NiPr)(NEt); (Cp)Nb(&#x2550;NiPr)(NMe); (Cp)Nb(&#x2550;NiPr)(NEtMe); (Cp)Nb(&#x2550;NCH)(NEt); (Cp)Nb(&#x2550;NCH)(NMe); and (Cp)Nb(&#x2550;NCH)(NEtMe)is provided. At least one reaction gas selected from the group consisting of ozone and water is provided. The vapor and the reaction gas react with the substrate according to a deposition process to form the metal-containing layer on at least one surface of the substrate. 

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Maisons-Alfort, France

Anthony Correia-Anacleto