Micron Technology Incorporated

Anthony C Krauth

Stephen W Russell

David A Kewley

Brian J Cleereman

Rex Stone

Some embodiments include methods of forming memory. A series of photoresist features may be formed over a gate stack, and a placeholder may be formed at an end of said series. The placeholder may be spaced from the end of said series by a gap. A layer may be formed over and between the photoresist features, over the placeholder, and within said gap. The layer may be anisotropically etched into a plurality of first vertical structures along edges of the photoresist features, and into a second vertical structure along an edge of the placeholder. A mask may be formed over the second vertical structure. Subsequently, the first vertical structures may be used to pattern string gates while the mask is used to pattern a select gate. Some embodiments include methods of forming conductive runners, and some embodiments may include semiconductor constructions.

Methods of forming memory cells; and methods of forming vertical structures

Methods of forming memory; and methods of forming vertical structures

The present invention relates to fabricating a reticle or mask for use in an extreme ultraviolet ('EUV') photolithographic process. The EUV reticle comprises a substrate, a planarizing layer formed over a surface of the substrate, and a reflective layer deposited in contact with the planarizing layer. The planarizing layer comprises a material that has superior surface flatness properties and provides a flat surface upon which the reflective layer is deposited. The planarizing layer is spin-coated onto the substrate and comprises a material such as an anti-reflective material, a dielectric material, or a polymer. Since the reflective layer is deposited over the flat surface provided by the planarizing layer, the reflective layer is not compromised by defects in the surface of the substrate.

Use of a planarizing layer to improve multilayer performance in ultraviolet masks

The present invention relates to fabricating a reticle or mask for use in an extreme ultraviolet (&ldquo;EUV&rdquo;) photolithographic process. The EUV reticle comprises a substrate, a planarizing layer formed over a surface of the substrate, and a reflective layer deposited in contact with the planarizing layer. The planarizing layer comprises a material that has superior surface flatness properties and provides a flat surface upon which the reflective layer is deposited. The planarizing layer is spin-coated onto the substrate and comprises a material such as an anti-reflective material, a dielectric material, or a polymer. Since the reflective layer is deposited over the flat surface provided by the planarizing layer, the reflective layer is not compromised by defects in the surface of the substrate.

Use of a planarizing layer to improve multilayer performance in extreme ultra-violet masks

Methods of forming layers of photoresist and apparatus for forming photoresist are described. In one embodiment, a wafer is provided and photoresist is applied thereover. The wafer is rotated while the photoresist is baked. In another embodiment, a wafer having photoresist formed thereover is positioned at a baking station. After positioning, the wafer is moved while exposed to baking conditions at the station. In another embodiment, a wafer having photoresist applied thereover is positioned on a rotatable hot plate at a photoresist baking station. The rotatable hot plate is rotated during at least some of the time the wafer is baked at the station. In another embodiment, photoresist is applied over a wafer surface and into a predefined non-uniform thickness over the surface. The non-uniform thickness is modified over the surface into a more uniform thickness while the photoresist is baked.

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Boise, ID, United States of America

Anthony C Krauth