Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Weebit Nano Ltd.

Anthonin Verdy

Gabriel Molas

Amir Regev

Paola Trotti

Laurent Grenouillet

Gaël Pillonnet

Gabriele Navarro

Jean-François Nodin

Jean-Baptiste Dory

A method for manufacturing an OxRAM resistive memory cell, includes forming a TiN lower electrode, firstly implanting Si atoms into the lower electrode with a first implantation dose and a first implantation acceleration voltage, the first implantation dose being strictly positive and strictly lower than 0.7·10cm, secondly implanting Si atoms into the lower electrode with a second implantation dose and a second implantation acceleration voltage strictly greater than the first implantation acceleration voltage, the second implantation dose being strictly positive and strictly lower than 0.6·10cm, the first and second acceleration voltages being selected to have an implantation profile following the first and second implantations having a maximum Si concentration at a depth of between 1 and 3 nm from the upper surface of the lower electrode, depositing an active layer onto the lower electrode implanted, depositing an upper electrode onto the active layer.

Method for manufacturing an OxRAM-type resistive memory cell and associated OxRAM-type memory cell

A memory includes at least one resistive memory cell and a write device. The memory cell includes a memory element having at least a highly resistive state and a lowly resistive state, and a selector arranged in series with the memory element, the selector being electrically conductive when a voltage greater than a given threshold voltage is applied to the selector. The write device includes at least one write capacitor and one charging device, and is configured to charge the write capacitor and then to connect it to the memory cell to program that cell.

Resistive memory with selector, equipped with a write capacitor, and associated writing method

An elementary cell includes a device and a non-volatile resistive memory mounted in a series, the device including an upper selector electrode, a lower selector electrode, a layer made up of a first active material, referred to as an active selecting layer, the device being intended to form a volatile selector; the memory including an upper memory electrode, a lower memory electrode, a layer made of at least a second active material, referred to as an active memory layer, the active selecting layer being in a conductive crystalline state and the memory being in a very strongly resistive state that is more resistive than the strongly resistive state of the memory.

Elementary cell comprising a resistive memory and a device intended to form a selector, cell matrix, associated manufacturing and initialization methods

A memory includes a matrix of resistive memory cells and an interfacing device to interface the matrix, the interfacing device including at least a conversion capacitor, an electric source, a first switch and a second switch, the interfacing device being configured to: a) connect the conversion capacitor to the source by the second switch to charge the conversion capacitor, then, b) disconnect the conversion capacitor from the source and connect the conversion capacitor to the matrix to achieve a conversion between, on the one hand, a resistive state of one of the memory cells of the matrix, and, on the other hand, a state of charge of the conversion capacitor.

Memory comprising a matrix of resistive memory cells, and associated method of interfacing

A selective non-volatile memory device includes a first electrode, a second electrode and at least one layer made of an active material. The device has at least two programmable memory states associated with two voltage thresholds and also provides a selective role when it is in a highly resistive state.

Selective non-volatile memory device and associated reading method

A matrix includes a plurality of volatile switches, each of the volatile switches including an active layer made of an OTS material, the plurality of volatile switches being divided into two groups in such a way as to form a message, each of the volatile switches of the first group having been initialized beforehand by an initialization voltage, none of the volatile switches of the second group having been initialized beforehand, the message being formed by the initialized or non-initialized states of each of the switches of the matrix.

Matrix of elementary switches forming a message, associated reading and writing methods

An aspect of the invention relates to an elementary cell that includes a breakdown layer made of dielectric having a thickness that depends on a breakdown voltage, a device and a non-volatile resistive memory mounted in series, the device including an upper selector electrode, a lower selector electrode, a layer made in a first active material, referred to as active selector layer, the device being intended to form a volatile selector; the memory including an upper memory electrode, a lower memory electrode, a layer made in at least one second active material, referred to as active memory layer.

Growing community of inventors

Grenoble, France

Anthonin Verdy