Novaled Ag

Novaled Gmbh

Sensient Imaging Technologies Gmbh

Samsung Sdi Co., Inc.

Hodogaya Chemical Co., Ltd.

Ansgar Werner

Olaf Zeika

Horst Hartmann

Jan Birnstock

Martin Pfeiffer

Michael Limmert

Carsten Rothe

Andrea Lux

Sascha Dorok

Kentaro Harada

Karl Leo

Steffen Willmann

Jan Blochwitz-Nimoth

Sven Murano

Qiang Huang

Kipo P Jang

Josef Salbeck

Benjamin Schulze

Omrane Fadhel

Ulrich Heggemann

Thomas Rosenow

Domagoj Pavicic

Michael Hofmann

Hyungsun Kim

Steffen Runge

Tobias Canzler

Ulrich Denker

Regina Luschtinetz

Gregor Schwartz

Karsten Walzer

Martin Vehse

Andreas Haldi

Tomas Kalisz

Rudolf Lessmann

Mike Zöllner

Martin Ammann

Elena Galan

Michael Felicetti

Andre Gruessing

Volker Lischewski

Mirko Tschunarjew

Fenghong Li

Rene Dathe

Philipp Wellmann

Elena GALÁN GARCÍA

Carla Bobbio

Martin Amman

Olaf Kühl

Simon Gessler

Andre Grüssing

Micheal Hofmann

Christine Bachmann

Leo Karl

Torsten Fritz

Markus Burghart

Tilmann Romainczyk

Francisco Bloom

Sofiane Bouazza

Makoto c/o Hodogaya Chemical Co Ltd Nagaoka

André Grüssing

André Grüßing

René Dathe

Gufeng Dr c/o Shanghai Jiao Tong University He

Andre c/o Novaled Gmbh Grüssing

Jens Angermann

Kai Gilge

Jéròme Ganier

Shigeru c/o Hodogaya Chemical Co Ltd Kusano

The present invention relates to a triazine compound according to formula 1: suitable for use as a layer material for electronic devices, and to an organic semiconductor layer comprising at least one compound according to formula 1, as well as to an organic electronic device comprising at least one organic semiconductor layer, and a method of manufacturing the same. 

Triazine compounds substituted with bulky groups

The present invention relates to a battery that includes at least one electrochemical cell. The at least one electrochemical cell includes a first electrode, a second electrode, a first electroactive material, a second electroactive material, and an electrolyte which is in contact with both electrodes, and at least one of the first electroactive material and the second electroactive material includes a radialene compound. Also provided is an electroactive material as well as a radialene compound.

Battery

The present invention relates to the use of a square planar transition metal complex as dopant, charge injection layer, electrode material or storage material.

Use of square planar transition metal complexes as dopant

The present invention relates to heterocyclic radicals or diradicals, the dimers, oligomers, polymers, dispiro compounds and polycycles thereof, to the use thereof, to organic semiconductive materials and to electronic and optoelectronic components.

Heterocyclic radical or diradical, the dimers, oligomers, polymers, dispiro compounds and polycycles thereof, the use thereof, organic semiconductive material and electronic or optoelectronic component

The invention relates to an organic component, in particular a light-emitting organic component, having an electrode () and a counter electrode () and also an arrangement of organic layers () which is arranged between the electrode () and the counterelectrode () and which is in electrical contact with the electrode () and the counterelectrode (), the arrangement of organic layers () comprising charge carrier transport layers () for transporting charge carriers injected from the electrode () and from the counterelectrode () into the arrangement of organic layers (), and with an injection layer () made from a molecular doping material being formed in the arrangement of organic layers () between the electrode () and a charge carrier transport layer () arranged opposite to the electrode (), which injection layer is in contact with the charge carrier transport layer () arranged opposite to the electrode (), the molecular doping material having a molecular weight of at least 300 g/mol.

Organic component

The present invention relates to the use of heterocyclic compounds as the charge transport material, blocker material or light-scattering material in electronic, optoelectronic or electroluminescent components.

Heterocyclic compounds and the use thereof in electronic and optoelectronic components

The present invention relates to a method for preparing doped organic semiconductor materials as well as a formulation which may be utilized in that method. The doped organic semiconductor materials are prepared by preparing a solution or suspension containing at least one dopant precursor, at least one organic material to be doped, and a solvent. The solution or suspension is then applied onto a substrate. After removing the solvent, the dopant precursor is converted into a dopant by application of activation energy. The dopant precursor, which is a dimer, oligomer, polymer, dispiro compound, or polycycle, is cleaved by the application of activation energy.

Method for preparing doped organic semiconductor materials and formulation utilized therein

An organic semiconductive material comprising at least one matrix material and at least one doping material, wherein the doping material is selected from an organic compound and wherein the matrix material is selected from an diamine compound, also an organic component and a mixture for producing a doped semiconductor layer.

Organic semiconducting materials and organic component

Organic semiconducting material comprising at least one matrix material and at least one doping material, wherein the doping material is selected from a [3]radialene compound, and wherein the matrix material is selected from a terphenyldiamine compound, as well as an organic component and a mixture for producing a doped semiconductor layer.

Organic semiconducting material and electronic component

The present invention relates to the use of heterocyclic radicals or diradicals, their dimers, oligomers, polymers, dispiro compounds and polycycles for use as dopant for doping an organic semiconductive matrix material, where the dopants have a structure based on the following formulae. 

Use of heterocyclic radicals for doping organic semiconductors

The invention relates to a method for producing a layer structure in an electronic device, especially in an organic light emitting device, the method comprising a step of producing the layer structure as a composite layer structure with free charge carriers generated by charge transfer between a first material and a second material, wherein the composite layer structure is provided as a stack of at least three non-mixed sub-layers made of the first material and the second material, respectively, wherein within the stack of the at least three non-mixed sub-layers each first material sub-layer is followed by an adjacent second material sub-layer and each second material sub-layer is followed by an adjacent first material sub-layer, and wherein the first material and the second material are selected to form a host-dopant material system for the electrical doping. The invention also relates to an electronic device.

Method for producing an electronic device with a layer structure and an electronic device

A method of using a metal complex as an n-dopant for doping an organic semiconducting matrix material in order to alter the latter's electrical characteristics is provided. In order to provide n-doped organic semiconductors with matrix materials having a low reduction potential, while achieving high conductivities, the n-dopant is a neutral electron-rich metal complex with a neutral or charged transition metal atom as a central atom and having at least 16 valence electrons. The complex can be polynuclear and can possess at least one metal-metal bond. At least one ligand can form a &#x3c0; complex with the central atom, which can be a bridge ligand, or it can contain at least one carbanion-carbon atom or a divalent atom. Methods for providing the novel n-dopants are provided.

Use of a metal complex as an n-Dopant for an organic semiconducting matrix material, organic of semiconducting material and electronic component, and also a dopant and ligand and process for producing same

Method for depositing a vapour deposition material on a base material, in particular for doping a semiconductor material, in which a vapour deposition batch, in which the vapour deposition material is enclosed in an air-tight manner by a shell, is introduced into a vapour deposition chamber and the shell is opened in the vapour deposition chamber, so that the vapour deposition material in the vapour deposition chamber then evaporates and is deposited on the base material, wherein the shell is opened by at least partially melting by heating a meltable shell material which at least partially forms the shell at a melting temperature which is lower than an evaporation temperature of the vapour deposition material.

Method for depositing a vapour deposition material

The invention relates to a light-emitting organic component, in particular a light-emitting organic diode, having an electrode spreading over an electrode surface area and a counter electrode spreading over a counter electrode surface area as well as an organic layer array formed between the electrode and the counter electrode and in electrical contact therewith, an electrical resistance gradient in a direction substantially parallel to the electrode surface area being formed within a region of the organic layer array at least partially overlapping with the electrode surface area. Furthermore, the invention relates to a method for the production of a light-emitting organic component.

Light emitting organic component and method for production thereof

The present invention relates to heterocyclic radicals or diradicals, the dimers, oligomers, polymers, dispiro compounds and polycycles thereof, to the use thereof to organic semiconductive materials and to electronic and optoelectronic components.

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Dresden, Germany

Ansgar Werner