General Electric Company

Momentive Performance Materials Gmbh

Anping Zhang

Reed Roeder Corderman

Joleyn Eileen Balch

Jie Jerry Liu

Steven Francis LeBoeuf

Mark Philip D'Evelyn

Dong-Sil Park

Rui Chen

Kristi Jean Narang

Huicong Hong

Anthony John Murray

Ji Ung Lee

Yun Li

Oliver Charles Boomhower

Renee Bushey Rohling

Heather Diane Hudspeth

Lauraine Denault

Peter Paul Gipp

Peter Joel Meschter

George Theodore Dalakos

Robert Dwayne Gossman

Gautam Parthasarathy

Vicki Herzl Watkins

Hongbo Cao

Holly Ann Blaydes

Azar Alizadeh

Juan Carlos Rojo

Hongying Peng

Xian-An Cao

David William Vernooy

Xian-an Cao

Gelu Comanescu

Mark Philip D'evelyn

Allan Robert Northrup

Yangang Andrew Xi

Steven Francis Leboeuf

A composite detection device having in-line desalting is provided. The composite detection device comprises a membrane configured for desalting at least a portion of an analyte stream, and a nanostructure for detecting a bio-molecule or a bio-molecule interaction, wherein the nanostructure and the membrane are arranged such that an analyte stream desalted at least in part by the membrane is detected by the nanostructure. A bio-sending detection system having the composite detection device and method of fabrication of the composite detection device are also provided.

Composite detection devices having in-line desalting and methods of making the same

A method of making a membrane assembly is provided. The method comprises forming an inorganic membrane layer disposed on a substrate, and forming a plurality of macropores in the substrate at least in part using anodization. Further, a membrane assembly is provided. The membrane assembly comprises a filtering membrane that is coupled to an anodized substrate comprising a plurality of macropores.

Membrane assemblies and methods of making and using the same

An article is provided in one embodiment of the invention. The article includes a display structure having a height, a width, and a thickness that define a volume. The display structure further includes components that emit light to generate a three-dimensional image within the volume. The display structure includes a stack. The stack includes at least one layer. The layer includes a substrate, the components that emit light and a controller. The components that emit light may each be secured to the substrate. The controller may be secured to the substrate. The controller may control the components that emit light to generate a three-dimensional image within the volume. The controller may be connected to two or more of the organic electronic devices. The components that emit light may include organic electronic devices. The components that emit light may include a light-emitting nano-wire device. The layer may include at least one sub-layer capable of emitting red light, at least one sub-layer capable of emitting blue light, and at least one sub-layer capable of emitting green light, and at least one layer that is capable of reversibly opacifying.

Three-dimensional display article

In one aspect of the present invention, a method is provided. The method includes disposing a substantially amorphous cadmium tin oxide layer on a support; and thermally processing the substantially amorphous cadmium tin oxide layer in an atmosphere substantially free of cadmium from an external source to form a transparent layer, wherein the transparent layer has an electrical resistivity less than about 2&#xd7;10Ohm-cm. Method of making a photovoltaic device is also provided.

Method of making a transparent conductive oxide layer and a photovoltaic device

An inorganic membrane device is provided. The device comprises a substrate having a network of pores, and a membrane layer at least partially coupled to the substrate and having a plurality of pores, wherein the pores have an aspect ratio in a range from about 1:2 to about 1:100.

Inorganic membrane devices and methods of making and using the same

The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc.) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.

Gated nanorod field emitter structures and associated methods of fabrication

A device comprising a light transmissive element, a nano-wire light-emitting device, and a light transmissive controller communicating with the nano-wire light-emitting device. The nano-wire light-emitting device, and the light transmissive controller, are supported by the light transmissive element. An article includes two or more of the devices.

Light-emitting device and article

A method may produce a resonant cavity light emitting device. A seed gallium nitride crystal and a source material in a nitrogen-containing superheated fluid may provide a medium for mass transport of gallium nitride precursors therebetween. A seed crystal surface may be prepared by applying a first thermal profile between the seed gallium nitride crystal and the source material. Gallium nitride material may be grown on the prepared surface of the seed gallium nitride crystal by applying a second thermal profile between the seed gallium nitride crystal and the source material while the seed gallium nitride crystal and the source material are in the nitrogen-containing superheated fluid. A stack of group III-nitride layers may be deposited on the single-crystal gallium nitride substrate. The stack may include a first mirror sub-stack and an active region adaptable for fabrication into one or more resonant cavity light emitting devices.

Resonant cavity light emitting devices and associated method

In a method for producing a resonant cavity light emitting device, a seed gallium nitride crystal () and a source material () are arranged in a nitrogen-containing superheated fluid () disposed in a sealed container () disposed in a multiple-zone furnace (). Gallium nitride material is grown on the seed gallium nitride crystal () to produce a single-crystal gallium nitride substrate ('). Said growing includes applying a temporally varying thermal gradient (&#x2032;) between the seed gallium nitride crystal () and the source material () to produce an increasing growth rate during at least a portion of the growing. A stack of group III-nitride layers () is deposited on the single-crystal gallium nitride substrate (&#x2032;), including a first mirror sub-stack () and an active region () adapted for fabrication into one or more resonant cavity light emitting devices ().

Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates

Growing community of inventors

Rexford, NY, United States of America

Anping Zhang