Umicore Ag & Co Kg

Sk Specialty Co., Ltd

Annika Frey

Ralf Karch

Angelino Doppiu

Eileen Woerner

Andreas Rivas-Nass

Wolf Schorn

Joerg Sundermeyer

Nicholas Rau

Andreas Rivas Nass

Jörg Sundermeyer

Michael Lennartz

Timo Ebert

Henrik Schumann

Tobias Burkert

Andreas Rivas-nass

David Grosse-Hagenbrock

Susanne Herritsch

Eileen Wörner

The invention relates to a method for producing MoOClunder inert conditions, comprising the steps of: The invention also relates to high-purity MoOCl, the use thereof, and electronic components.

Production of MoOCl

The invention relates to tetraalkylammonium-tetra- or hexahydroxometallates such as tetraethylammonium hexahydroxoplatinate, (N(alkyl)4)y[M(OH)x], a method for the production thereof, and the use thereof for producing catalysts.

Precious metal compounds

The invention relates to the synthesis and provision of a new class of volatile metal organic compounds based on bis(alkylimine)glyoxal and bis(dialkylhydrazone)glyoxal ligands in combination with cyclopentadienide and alkyl ligands for use in ALD and CVD processes.

Metal organic compounds

Metal complexes of formula (I) are described:[M(L)(L)(hydra)]  formula (I)

Metal complexes for gas-phase thin-film deposition

The invention relates to compounds in accordance with the general formula [Ru(arene)(R&#x2014;N&#x2550;CR&#x2014;CR&#x2550;N&#x2014;R)] or [Ru(arene)((R,R)N&#x2014;N&#x2550;CR&#x2014;CR&#x2550;N&#x2014;N(R,R))]. In this case, arene is selected from the group consisting of mononuclear and polynuclear arenes and heteroarenes. R, R, RH, Rand R-Rare independently selected from the group consisting of H, an alkyl radical (C1-C10) and an aryl radical. It further relates to methods for the production of these compounds, compounds obtainable according to these methods, their use and a substrate having on a surface thereof a ruthenium layer or a layer containing ruthenium. In addition, the invention relates to a method for producing compounds [Ru(arene)X]2, wherein arene is selected from the group consisting of mononuclear and polynuclear arenes and X=halogen, compounds of this type obtainable according to this method, and their use. The aforementioned ruthenium(O) compounds can be produced in a simple, cost-effective and reproducible manner with a high degree of purity and good yield. Due to their high degree of purity, they are suitable for use as ruthenium(O) precursors.

Organometallic compounds for the manufacture of a semiconductor element or electronic memory

The invention relates to methods for the production of trialkylindium (InR), wherein the production takes place in a reaction mixture that contains at least one alkylindium halide, a trialkylaluminum (AlR), a carboxylate, and a solvent, wherein R is chosen independently of one another from C1-C4 alkyl, and X is chosen independently of one another from Cl, Br, and I.

Production of trialkylindium compounds in the presence of carboxylates

The invention relates to a method for the cost-effective and environmentally friendly production of alkyl indium sesquichloride in high yield and with high selectivity and purity. The alkyl indium sesquichloride produced according to the invention is particularly suitable, also as a result of the high purity and yield, for the production, on demand, of indium-containing precursors in high yield and with high selectivity and purity. As a result of the high purity, the indium-containing precursors that can be produced are particularly suitable for metal organic chemical vapour deposition (MOCVD) or metal organic vapour phase epitaxy (MOVPE). The novel method according to the invention is characterised by the improved execution of the method, in particular a rapid process control. Owing to targeted and extensive use of raw materials that are cost-effective and have a low environmental impact, the method is also suitable for use on an industrial scale.

Method for producing alkyl-indium compounds and the use thereof

The present patent application relates to a novel organometallic compound, a process for the preparation thereof, and its use.

Organometallic compound

The invention relates to an improved process for inexpensive and environmentally benign preparation of trialkylgallium compounds of the general formula:RGain high yield and selectivity, where R is alkyl of 1 to 4 carbon atoms. Trialkylgallium is prepared according to the invention via the intermediate stage alkylgallium dichloride (RGaCl) or dialkylgallium chloride/alkylgallium dichloride mixture (RGaCl/RGaCl). The RGaClobtained or the RGaCl/RGaClmixture also forms part of the subject-matter of the present invention. The novel process of the present invention is notable for improved process management. The process intentionally makes substantial use of inexpensive starting materials and reagents of low environmental impact and so is also useful for the industrial scale. The trialkylgallium compounds obtained are very pure and so are particularly useful as organometallic precursor for metal-organic chemical vapor deposition (MOCVD) or metal-organic vapor phase epitaxy (MOVPE) in semiconductor and microsystem technology.

Method for producing trialkylgallium compounds and the use thereof

The invention relates to a process for the cost-effective and environmentally responsible preparation of alkyl indium sesquichloride in high yield and with high selectivity and purity. The alkyl indium sesquichloride prepared in accordance with the invention is particularly suitable, also as a result of its high purity and yield, for preparation of indium-containing precursors in accordance with demand, in high yield and with high selectivity and purity. As a result of the high purity, the indium-containing precursors that are preparable are particularly suitable for metal-organic chemical vapor deposition (MOCVD) or metal-organic vapor phase epitaxy (MOVPE). The novel process according to the invention is characterized by the improved execution of the process, in particular by rapid process control. Owing to targeted and extensive use of raw materials that are inexpensive and have a low level of environmental pollution, the process is also suitable for use on an industrial scale.

Process for preparing alkyl-indium compounds and the use thereof

The invention relates to a method for the cost-effective and environmentally friendly production of alkyl indium sesquichloride in high yield and with high selectivity and purity. The alkyl indium sesquichloride produced according to the invention is particularly suitable, also as a result of the high purity and yield, for the production, on demand, of indium-containing precursors in high yield and with high selectivity and purity. As a result of the high purity, the indium-containing precursors that can be produced are particularly suitable for metal organic chemical vapor deposition (MOCVD) or metal organic vapor phase epitaxy (MOVPE). The novel method according to the invention is characterized by the improved execution of the method, in particular a rapid process control. Owing to targeted and extensive use of raw materials that are cost-effective and have a low environmental impact, the method is also suitable for use on an industrial scale.

The invention relates to a process for preparing trialkylmetal compounds of the general formula RM (where M=metal of group IIIA of the Periodic Table of the Elements (PTE), preferably gallium or indium, and R=C-C-alkyl, preferably methyl or ethyl). The process is based on the reaction of metal trichloride (MeCl) with alkylaluminium sesquichloride (RAlCl) in the presence of at least one alkali metal halide as auxiliary base. The reaction mixture is heated to a temperature above 120&#xb0; C. and the trialkylmetal compound is separated off from the reaction mixture via a separator, with partially alkylated products being at the same time recirculated to the reaction mixture. In a further step, the reaction mixture is heated to a maximum of 350&#xb0; C. and the remaining alkylated and partially alkylated products are separated off. The products obtained in this way can optionally be recycled in the process. The process displays a high yield of trialkylmetal compound and also a high metal utilization; the products are used as precursors for MOCVD processes.

Process for preparing trialkyl compounds of metals of group IIIA

The invention relates to a method for the cost-effective and environmentally friendly production of dialkyl indium chloride in high yield and with high selectivity and purity. The dialkyl indium chloride produced according to the invention is particularly suitable, also as a result of the high purity and yield, for the production, on demand, of indium-containing precursors in high yield and with high selectivity and purity. As a result of the high purity, the indium-containing precursors that can be produced are particularly suitable for metal organic chemical vapor deposition (MOCVD) or metal organic vapor phase epitaxy (MOVPE). The novel method according to the invention is characterized by the improved execution of the method, in particular a rapid process control. Owing to targeted and extensive use of raw materials that are cost-effective and have a low environmental impact, the method is also suitable for use on an industrial scale.

Growing community of inventors

Hanau, Germany

Annika Frey