Infineon Technologies Ag

Annette S&auml;nger

Bernhard Sell

Robert Aigner

Harald Seidl

Martin Gutsche

Stephan Marksteiner

Peter Moll

Gerhard Beitel

Igor Kasko

Georg Schulze-Icking

L&uuml;der Elbrecht

Tungsten silicide layers are formed on a substrate and a semiconductor component has deep trench capacitors with a filling of tungsten silicide. The tungsten silicide layers are deposited on the substrate at a temperature of less than 400&deg; C. and at a pressure of less than 10 torr from the vapor phase. The vapor phase hs a tungsten-containing precursor substance and a silicon-containing precursor substance. The molar ratio of the silicon-containing precursor compound to the tungsten-containing precursor compound in the vapor phase is selected to be greater than 500.

Process for depositing WSix layers on a high topography with a defined stoichiometry

At least a partial layer of an upper capacitor electrode is formed by metal carbide, preferably by a transition metal carbide. In one embodiment, the metal carbide layer is formed by depositing an alternating sequence of metal-containing layers and carbon-containing layers on top of one another and then subjecting them to a heat treatment, in such a manner that they mix with one another. The patterning of the layer sequence can be carried out before the carbide formation step.

Method for fabricating a metal carbide layer and method for fabricating a trench capacitor containing a metal carbide

A capacitor electrode is produced with an underlying barrier structure. A barrier incorporation layer is used and a CMP (chemical mechanical polishing) process is employed in order to produce the barrier structure. The capacitor electrode with an underlying barrier structure is produced by depositing a barrier layer on a semiconductor substrate; forming a barrier structure from the barrier layer with a lithographic mask and an etching step; depositing a barrier incorporation layer covering the barrier structure and surrounding regions; and removing the barrier incorporation layer with chemical mechanical polishing until the barrier structure is uncovered, to thereby form the capacitor electrode above the barrier structure.

Method of producing a capacitor electrode with a barrier structure

An acoustic mirror is described which is formed of at least one first insulating layer, a first metal layer disposed thereon, a second insulating layer disposed thereon and a second metal layer disposed thereon. An auxiliary layer is produced on the first insulating layer whereby a recess extending as far as the first insulating layer is created therein. The first metal layer is substantially deposited and removed by chemical/mechanical polishing until the parts of the first metal layer disposed outside the recess are no longer present. The second metal layer is also produced in a recess with the aid of chemical/mechanical polishing. More than two insulating layers and two metal layers can be provided. The first metal layer and the second metal layer can be produced in the same recess.

Acoustic mirror and method for producing the acoustic mirror

Growing community of inventors

Dresden, Germany

Annette Sänger

Growing community of inventors

Dresden, Germany

Annette S&auml;nger

Annette Sänger