Koninklijke Philips Corporation N.v.

Philips Lumileds Lighting Company LLC

Lumileds Lighting U.s., LLC

Lumileds LLC

Lumileds Holding B.v.

Anneli Munkholm

Werner K Goetz

Rafael Ignacio Aldaz

Patrick Nolan Grillot

Hanmin Zhao

Theodore Chung

Michael Ragan Krames

Nathan Fredrick Gardner

Richard P Schneider

Stephen Andrew Stockman

Christopher P Kocot

Junko Kobayashi

Andrew Y Kim

Patrick N Grillot

Richard Scott Kern

Deborah L Colbentz

Deborah L Coblentz

In some embodiments of the invention, a transparent substrate AlInGaP device includes an etch stop layer that may be less absorbing than a conventional etch stop layer. In some embodiments of the invention, a transparent substrate AlInGaP device includes a bonded interface that may be configured to give a lower forward voltage than a conventional bonded interface. Reducing the absorption and/or the forward voltage in a device may improve the efficiency of the device.

Light emitting device with bonded interface

A device includes a semiconductor structure with at least one III-P light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure further includes a GaAsPp-contact layer, wherein x&#x3c;0.45. A first metal contact is in direct contact with the GaAsPp-contact layer. A second metal contact is electrically connected to the n-type region. The first and second metal contacts are formed on a same side of the semiconductor structure.

P-contact layer for a III-P semiconductor light emitting device

A semiconductor structure includes a light emitting region, a p-type region disposed on a first side of the light emitting region, and an n-type region disposed on a second side of the light emitting region. At least 10% of a thickness of the semiconductor structure on the first side of the light emitting region comprises indium. Some examples of such a semiconductor light emitting device may be formed by growing an n-type region, growing a p-type region, and growing a light emitting layer disposed between the n-type region and the p-type region. The difference in temperature between the growth temperature of a part of the n-type region and the growth temperature of a part of the p-type region is at least 140&#xb0; C.

P-type layer for a III-nitride light emitting device

In a III-nitride light emitting device, a ternary or quaternary light emitting layer is configured to control the degree of phase separation. In some embodiments, the difference between the InN composition at any point in the light emitting layer and the average InN composition in the light emitting layer is less than 20%. In some embodiments, control of phase separation is accomplished by controlling the ratio of the lattice constant in a relaxed, free standing layer having the same composition as the light emitting layer to the lattice constant in a base region. For example, the ratio may be between about 1 and about 1.01.

Strain-controlled III-nitride light emitting device

III-Nitride light emitting diodes having improved performance are provided. In one embodiment, a light emitting device includes a substrate, a nucleation layer disposed on the substrate, a defect reduction structure disposed above the nucleation layer, and an n-type III-Nitride semiconductor layer disposed above the defect reduction structure. The n-type layer has, for example, a thickness greater than about one micron and a silicon dopant concentration greater than or equal to about 10 cm . In another embodiment, a light emitting device includes a III-Nitride semiconductor active region that includes at least one barrier layer either uniformly doped with an impurity or doped with an impurity having a concentration graded in a direction substantially perpendicular to the active region.

III-Nitride light emitting devices with low driving voltage

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Mountain View, CA, United States of America

Anneli Munkholm