Centre National De La Recherche Scientifique

Anne-Marie Bonnot

Vincent Bouchiat

Marc Faucher

The invention relates to a method of growing carbon nanotubes () on a substrate () using a hot-wire-assisted chemical vapor deposition method. The inventive method consists in first depositing a bilayer of titanium () and cobalt () on the substrate such that: the thickness of the titanium layer is between 0.5 and 5 nm, the thickness of the cobalt layer is between 0.25 and 10 nm, and the thickness of the cobalt layer is between half and double that of the titanium layer.

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Meylan, France

Anne-Marie Bonnot