Lam Research Corporation

Anne Le Gouil

Yoko Yamaguchi

Yasushi Ishikawa

Ramkumar Subramanian

Amit Jain

Jeffrey R Lindain

Yoko Yamaguchi-Adams

Methods for etching features into carbon material using a metal-doped carbon-containing hard mask to reduce and eliminate redeposition of silicon-containing residues are provided herein. Methods involve depositing a metal-doped carbon-containing hard mask over the carbon material prior to etching the carbon material, patterning the metal-doped carbon-containing hard mask, and using the patterned metal-doped carbon-containing hard mask to etch the carbon material such that the use of a silicon-containing mask during etch of the carbon material is eliminated.

Etching carbon layer using doped carbon as a hard mask

A method for etching a tungsten containing layer in an etch chamber is provided. A substrate is placed with a tungsten containing layer in the etch chamber. A plurality of cycles is provided. Each cycle comprises a passivation phase for forming a passivation layer on sidewalls and bottoms of features in the tungsten containing layer. Additionally, each cycle comprises an etch phase for etching features in the tungsten containing layer.

Method of tungsten etching

A method for etching features in a plurality of silicon based bilayers forming a stack on a wafer in a plasma processing chamber is provided. A main etch gas is flowed into the plasma processing chamber. The main etch gas is formed into a plasma, while providing a first pressure. A wafer temperature of less than 20&#xb0; C. is maintained. The pressure is ramped to a second pressure less than the first pressure as the plasma etches through a plurality of the plurality of silicon based bilayers. The flow of the main etch gas is stopped after a first plurality of the plurality of bilayers is etched.

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Fremont, CA, United States of America

Anne Le Gouil