Imec

Taiwan Semiconductor Manufacturing Comp. Ltd.

Texas Instruments Corporation

Koninklijke Philips Corporation N.v.

Interuniversitair Microelektronica Centrum (Imec)

Panasonic Corporation

Nxp B.v.

Anne Lauwers

Jorge Adrian Kittl

Anabela Veloso

Marcus Johannes Henricus Van Dal

Shou-Zen Chang

Stefan Jakschik

HongYu Yu

Anil Kottantharyil

Hong Yu Yu

Anil Kottantharayil

A dual workfunction semiconductor device which comprises a first and second control electrode comprising a metal-semiconductor compound, e.g. a silicide or a germanide, and a dual workfunction semiconductor device thus obtained are disclosed. In one aspect, the method comprises forming a blocking region for preventing diffusion of metal from the metal-semiconductor compound of the first control electrode to the metal-semiconductor compound of the second control electrode, the blocking region being formed at a location where an interface between the first and second control electrodes is to be formed or is formed. By preventing metal to diffuse from the one to the other control electrode the constitution of the metal-semiconductor compounds of the first and second control electrodes may remain substantially unchanged during e.g. thermal steps in further processing of the device.

Dual workfunction semiconductor device

A semiconductor device is disclosed that comprises a fully silicided electrode formed of an alloy of a semiconductor material and a metal, a workfunction modulating element for modulating a workfunction of the alloy, and a dielectric in contact with the fully silicided electrode. At least a part of the dielectric which is in direct contact with the fully silicided electrode comprises a stopping material for substantially preventing the workfunction modulating element from implantation into and/or diffusing towards the dielectric. A method for forming such a semiconductor device is also disclosed.

Semiconductor device with reduced diffusion of workfunction modulating element

A method for manufacturing a MOSFET device with a fully silicided (FUSI) gate is described. This method may be used to prevent formation of shorts between the FUSI gate and a contact to a source and/or a drain region. In particular, the method discloses the formation of an expansion volume above a gate dielectric. The volume is designed to substantially contain the fully silicided gate.

Method for forming a fully silicided gate and devices obtained thereof

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Aartselaar, Belgium

Anne Lauwers