Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Aledia

Commissariat a L'energie Atomique Et Aux Energies

Anne-Laure Bavencove

Philippe Gilet

Amélie Dussaigne

Emilie Pougeoise

Alain Million

William Vandendaele

Pierre Moller

An optoelectronic device includes at least first and second light-emitting nanowires on a support, each comprising an area for the injection of holes and an area for the injection of electrons, a series electric connection including a connection nanowire on the support, which includes a first region forming an electric path with the hole injection area of the first nanowire, a second region forming an electric path with the electron injection area of the second nanowire, and a third region enabling a current to flow between first and second regions. Also included are a first conductive area connecting the hole injection area of the first nanowire and the first region of the connection nanowire and electrically insulated from the second nanowire, and a second conductive area connecting the second region of the connection nanowire and electron injection area of the second nanowire and electrically insulated from the first nanowire.

In-series electrical connection of light-emitting nanowires

An optoelectronic device comprises microwires or nanowires, each of which comprises an alternation of passivated portions and of active portions, the active portions being surrounded with an active layer, where the active layers do not extend on the passivated portions.

Optoelectronic device comprising microwires or nanowires

A light-emitting diode is provided, including an active semiconductor area for the radiative recombination of electron-hole pairs having a plurality of nanowires, each made of an unintentionally doped semiconductor material, a first semiconductor area for radially injecting holes into each nanowire, the first semiconductor area being made of a doped semiconductor material having a first conductivity type and having a bandgap that is greater than the bandgap of the semiconductor material of the nanowires, and a second semiconductor area for axially injecting electrons into each nanowire, the second semiconductor area being made of a doped semiconductor material having a second conductivity type that is opposite to that of the first conductivity type.

Nanowire-based optoelectronic device for light-emission

Nanowire-based optoelectronic device for light emission

Growing community of inventors

Grenoble, France

Anne-Laure Bavencove