Novaled Gmbh

Anne Fadhel

Volodymyr Senkovskyy

Ulrich Denker

Regina Luschtinetz

Martin Ammann

Pierre Seidenglanz

Stefan Zott

Peter Robaschik

The present invention relates to a method for preparing an organic semiconducting layer comprising the steps: a) providing a first composition in a first vacuum thermal evaporation source, the first composition comprising aa) a first organic compound, the first organic compound comprising at least one unsubstituted or substituted C-Ccondensed aryl group and/or at least one unsubstituted or substituted C-Cheteroaryl group, wherein the one or more substituent(s) if present, are selected from the group consisting of (i) deuterium, (ii) a halogen, (iii) a Cto Csilyl group, (iv) a Cto Calkyl group, (v) a C to Calkylsilyl group, (vi) a Cto Carylsilyl group, (vii) a Cto Ccycloalkyl group, (viii) a Cto Cheterocycloalkyl group, (ix) a Cto Caiyl group, (x) a Cto Cheteroaryl group, (xi) a Cto Cperfluoro-hydrocarbyl group, or (xii) a Cto Ctrifluoroalkyl group, wherein the first organic compound has i) a dipole moment in the range of ≥0 and ≤2 Debye; and ii) a molecular weight in the range of ≥400 and ≤1,800; and bb) a metal borate compound; b) transferring the first composition from the solid phase into the gas phase in a vacuum chamber; and c) depositing the first composition on a substrate to form the organic semiconducting layer; a composition for use therein, and an organic electronic device prepared this way.

Method for preparing an organic semiconducting layer, a composition for use therein and an organic electronic device

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Dresden, Germany

Anne Fadhel