Applied Materials, Inc.

Annabel Susan Nickles

Pravin K Narwankar

Yaxin Wang

Ravi Rajagopalan

Deepak Upadhyaya

Xiaoliang Jin

A process for forming high k dielectric thin films on a substrate, e.g., silicon, by 1) low temperature (500&deg; C. or less) deposition of a dielectric material onto a surface, followed by 2) high temperature post-deposition annealing. The deposition can take place in an oxidative environment, followed by annealing, or alternatively the deposition can take place in a non-oxidative environment (e.g., N ), followed by oxidation and annealing.

Barium strontium titanate annealing process

A capacitor structure comprising a bottom electrode, an insulator and a top electrode, and method for manufacturing the same. The bottom and top electrodes preferably include a metal portion and a conducting oxygen-containing metal portion. In one embodiment, a layer of ruthenium is deposited to form a portion of the bottom electrode. Prior to deposition of the insulator, the ruthenium is annealed in an oxygen-containing environment. The insulator is then deposited on the oxygen-containing ruthenium layer. Formation of the top electrode includes depositing a first metal on the insulator, annealing the first metal and then depositing a second metal. The first and second metals may be ruthenium.

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Palo Alto, CA, United States of America

Annabel Susan Nickles