Osram Oled Gmbh

Anna Strozecka-Assig

Johannes Saric

Sebastian Pickel

Wolfgang Schmid

Johannes Baur

Bernd Böhm

Anna Nirschl

Katharina Werner

In one embodiment, the optoelectronic semiconductor chip includes a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization.

Optoelectronic semiconductor chip and method for producting an optoelectronic semiconductor chip

Provided is an optoelectronic semiconductor chip including a semiconductor layer sequence having an active layer, a doped current spreading layer and an output coupling layer, which are arranged one above the other in this order. The active layer generates primary radiation during intended operation. The current spreading layer includes a larger lateral electrical conductivity than the output coupling layer. The output coupling layer includes output coupling structures for coupling out radiation on an exit side facing away from the active layer. The output coupling layer includes a lower absorption coefficient for primary radiation than the current spreading layer.

Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip

In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization.

In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating radiation with a wavelength of maximum intensity L. A mirror comprises a cover layer. The cover layer is made of a material transparent to the radiation and has an optical thickness between 0.5 L and 3 L inclusive. The cover layer is followed in a direction away from the semiconductor layer sequence by between inclusive two and inclusive ten intermediate layers of the mirror. The intermediate layers alternately have high and low refractive indices. An optical thickness of at least one of the intermediate layers is not equal to L/4. The intermediate layers are followed in the direction away from the semiconductor layer sequence by at least one metal layer of the mirror as a reflection layer.

Optoelectronic semiconductor chip

Optoelectronic semiconductor chip with high reflectivity and method for producing an optoelectronic semiconductor chip with high reflectivity

In one embodiment, the optoelectronic semiconductor chip () comprises a semiconductor layer sequence () with an active zone () for generating radiation with a wavelength of maximum intensity L. A mirror () comprises a cover layer (). The cover layer () is made of a material transparent to the radiation and has an optical thickness between 0.5 L and 3 L inclusive. The cover layer () is followed in a direction away from the semiconductor layer sequence () by between inclusive two and inclusive ten intermediate layers () of the mirror (). The intermediate layers () alternately have high and low refractive indices. An optical thickness of at least one of the intermediate layers () is not equal to L/4. The intermediate layers () are followed in the direction away from the semiconductor layer sequence () by at least one metal layer () of the mirror () as a reflection layer.

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Wuppertal, Germany

Anna Strozecka-Assig