Stmicroelectronics S.r.l.

Anna Muscara'

Massimo Cataldo Mazzillo

Maria Eloisa Castagna

Salvatore Coffa

Mariantonietta Monaco

An avalanche photodiode includes a cathode region and an anode region. A lateral insulating region including a barrier region and an insulating region surrounds the anode region. The cathode region forms a planar optical guide within a core of the cathode region, the guide being configured to guide photons generated during avalanche. The barrier region has a thickness extending through the planar optical guide to surround the core and prevent propagation of the photons beyond the barrier region. The core forms an electrical-confinement region for minority carriers generated within the core.

Avalanche photodiode operating in geiger mode including a structure for electro-optical confinement for crosstalk reduction, and array of photodiodes

A device having an FET structure for the emission of an optical radiation integrated on a substrate of a semiconductor material, includes a first mirror, a second mirror of a dielectric type and an active layer comprising a main zone designed to be excited to generate the radiation. The device also includes a first electrically conductive layer containing two doped regions constitutes a source well and a drain well between which a current flows, a second electrically conductive layer which constitutes a gate, and a dielectric region between the first and second layer, to space corresponding peripheral portions of the first and second layers so that the current is channeled in the main zone for generating excitation radiation. The first and second electrically conductive layers and the active layer define an optical cavity.

Resonant cavity optical radiation emission device and process for manufacturing same

A device for emitting optical radiation is integrated on a substrate of semiconductor material. The device includes an active layer having a main area for generating radiation, and first and second electro-conductive layers having an electric signal that generates an electric field to which an exciting current is associated. In the device, a dielectric region is formed between the first and second layers to space peripheral portions of the first and second layers so that the electric field in the main area is higher than the electric field between the peripheral portions, thereby facilitating generation of the exciting current in the main area. A method of manufacturing is also disclosed.

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Patti, Italy

Anna Muscara'