Stmicroelectronics S.r.l.

Anna Morra

Teresa Napolitano

Roberta Cuozzo

Luigi Giuseppe Occhipinti

Raffaele Vecchione

Giovanna Salzillo

Maria Grazia Maglione

An organic thin film transistor includes a dielectric layer and an active layer overlapping the dielectric layer, a source contact and a drain contact arranged on a surface of the active layer opposite the dielectric layer and mutually separated by an intermediate region, the source contact and drain contact having first and second inner walls, respectively, facing the intermediate region, and a gate contact arranged on a portion of another surface of the dielectric layer opposite the active layer and having first and second side walls aligned with the first and second inner walls, respectively.

Organic thin film transistor and process for manufacturing same

A method realizes a thin film organic electronic device integrated on a substrate and includes an organic material layer and an organic thin film transistor or OTFT transistor. The method comprises: depositing the organic material layer on the substrate, the organic material layer being a conductive organic polymer; patterning by a soft-lithographic procedure the organic material layer to create a reduced portion in order to make a channel area of the OTFT transistor; masking the organic material layer by covering with a cover mask a source area and a drain area of the OTFT transistor; irradiating by ultraviolet radiation to deactivate exposed portions of the organic material layer defining the source area, the drain area and the channel area; depositing on the organic material layer a semiconductor layer; and creating on the semiconductor layer a gate area of the OTFT transistor.

Method for realizing a thin film organic electronic device and corresponding device

A process for manufacturing an organic thin film transistor includes the steps of arranging a shaping element having a first profile defining a slot, forming a mold suitable to define a cavity with the shaping element, depositing source and drain layers, an active material layer and a dielectric layer within the cavity, depositing a gate layer in the slot of the shaping element, and transferring the gate layer in contact with the dielectric layer by means of the shaping element.

A process for manufacturing a non-volatile memory structure, in particular of a cross-point type provided with an array of memory cells, including forming bottom electrodes on a substrate; forming areas of active material on the bottom electrodes; and forming top electrodes on the areas of active material. The memory cells are defined at the intersection of the bottom electrode with the top electrode. At least one from among the steps of forming bottom electrodes, forming areas of active material, and forming top electrodes includes using soft-lithography techniques, chosen from amongst 'microtransfer molding', 'micromolding in capillary', and &#x201c;microcontact printing&#x201d;. According to a first type of structure, the step of forming areas of active material includes forming strips of active material in a way self-aligned with respect to the bottom electrodes or the top electrodes; according to a different type of structure, the step of forming areas of active material envisages forming monolayer or multilayer pads between the bottom electrodes and the top electrodes.

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Cercola, Italy

Anna Morra