Imec

Katholieke Universiteit Leuven, Ku Leuven R&d

Interuniversitair Microelektronica Centrum (imec)

Katholieke Universiteit Leuven

Other

Imec Vzw

Katholieke Universiteit

American University Cairo

Ann Witvrouw

Luc Haspeslagh

Stefan Cosemans

Sherif Sedky

Maliheh Ramezani

Gert Claes

Jean-Pierre Celis

Cristina Rusu

Constantine N Anagnostopoulos

Matty Caymax

Philippe Vereecken

Serge Vanhaelemeersch

Simone Severi

Chris Van Hoof

Kris A Baert

Marc Schaekers

Anthony Muscat

Jan Fransaer

Hari Pathangi Sriraman

Ahmed Abdel Aziz

Brigitte Parmentier

Atze De Vries

Piet De Moor

Agnes Verbist

Brenda Eyckens

Maria Gromova

Raquel Consuelo Hellin Rico

Raquel Hellin Rico

Joumana El Rifai

Bin Guo

Ahmed Kamal Said Abdel Aziz

Raquel Consuelo HELLÍN Rico

Anthony Joseph Muscat

A method and apparatus is provided for self-assembly of micro-components such as microchips onto a carrier substrate, provided with assembly locations for the components. The components are supplied to the carrier by a liquid flow, while a template substrate is arranged facing the carrier. The template is a substrate provided with openings aligned to the assembly locations. The carrier and template are submerged into a tank filled with the liquid, while the liquid flow is supplied to the template side together with the components, so that the components are guided towards the openings by the flow of liquid. Once a component is trapped into an opening of the template, substantially no further liquid flow through the opening is possible, so that following components are guided towards the remaining openings, thereby establishing a fast and reliable self-assembly process.

Apparatus for fluid guided self-assembly of microcomponents

The disclosed technology relates generally to electromechanical devices, and relates more specifically to a nanoelectromechanical switch device and a method for manufacturing the same. In one aspect, an electromechanical device includes a first electrode stack and a second electrode stack, both electrode stacks extending in a vertical direction relative to a substrate surface and being spaced apart by a gap. The electromechanical device additionally includes a third electrode stack comprising a beam extending in a vertical direction in the electrode gap and being spaced apart from the first electrode stack by a first gap, from the second electrode stack by a second gap, and from the substrate by a third gap; and a connector portion overlapping the first and second electrode stacks, wherein, in operation, the beam is movable in a first direction so as to electrically connect with the first electrode stack or in a second direction so as to electrically connect with the second electrode stack, and, in a rest position, the beam is isolated from the first and the second electrode stacks. Additionally, at least one of the first or second electrode stacks comprises two electrodes including a top electrode stacked over a bottom electrode, wherein the top and bottom electrodes are separated by an electrical insulator.

Vertical electromechanical switch device

A non-volatile memory arrangement comprising a plurality of cells is disclosed. In one aspect, each cell comprises a memory element and a read selector in series. Further, the memory element is a nano-electro-mechanical switch comprising an anchor, a beam fixed to the anchor, a first and second control gate, for controlling the position of the beam, a first output node against which the beam can be positioned. The cell also comprises a read selector comprising a first selector terminal, a second selector terminal, the first selector terminal connected to the first output node. The first respectively second control gates of switches of a same word are connected together by a first respectively second write word line serving as control gate.

Nano-electro-mechanical based memory

Method for fluid guided self-assembly of microcomponents

Anchor designs for thin film packages are disclosed that, in a preferred embodiment are a combination of SiGe-filled trenches and Si-oxide-filled spacing. Depending on the release process, additional manufacturing process steps are performed in order to obtain a desired mechanical strength. For aggressive release processes, additional soft sputter etch and a Ti&#x2014;TiN interlayer in the anchor region may be added. The ratio of the total SiGe&#x2014;SiGe anchor area to the SiO&#x2014;SiGe anchor area determines the mechanical strength of the anchor. If this ratio is larger than 1, the thin film package reaches the MIL-standard requirements.

Thin film wafer level package

A method is disclosed for manufacturing a semiconductor device, including providing a substrate comprising a main surface with a non flat topography, the surface comprising at least one substantial topography variation, forming a first capping layer over the main surface such that, during formation of the first capping layer, local defects in the first capping layer are introduced, the local defects being positioned at locations corresponding to the substantial topography variations and the local defects being suitable for allowing a predetermined fluid to pass through. Associated membrane layers, capping layers, and microelectronic devices are also disclosed.

Method of manufacturing a semiconductor device and semiconductor devices resulting therefrom

Methods for manufacturing micromachined devices and the devices obtained are disclosed. In one embodiment, the method comprises providing a structural layer comprising an amorphous semiconductor material, forming a shielding layer on a first portion of the structural layer and leaving exposed a second portion of the structural layer, and annealing the second portion using a first fluence. The method further comprises removing the shielding layer, and annealing the first portion and the second portion using a second fluence that is less than half the first fluence. In an embodiment, the device comprises a substrate layer, an underlying layer formed on the substrate layer, and a sacrificial layer formed on only a portion of the underlying layer. The device further comprises a structural layer that is in contact with the underlying layer and comprises a first region annealed using a first fluence and a second region annealed using a second fluence.

Method for manufacturing a micromachined device and the micromachined device made thereof

The present disclosure is related to a method for forming a catalyst nanoparticle on a metal surface, the nanoparticle being suitable for growing a single nanostructure, in particular a carbon nanotube, the method comprising at least the steps of: providing a substrate, having a metal layer on at least a portion of the substrate surface, depositing a sacrificial layer at least on the metal layer, producing a small hole in the sacrificial layer, thereby exposing the metal layer, providing a single catalyst nanoparticle into the hole, removing the sacrificial layer. The disclosure is further related to growing a carbon nanotube from the catalyst nanoparticle.

Method for forming a catalyst suitable for growth of carbon nanotubes

One inventive aspect relates to a method for forming hermetically sealed cavities, e.g. semiconductor cavities comprising fragile devices, MEMS or NEMS devices. The method allows forming hermetically sealed cavities at a controlled atmosphere and pressure and at low temperatures, for example, at temperatures not exceeding about 200&#xb0; C. The method further allows forming sealed cavities with short release times, for example, release times of about a few minutes to 30 minutes. The method may, for example, be used for zero level packaging of MEMS or NEMS devices.

Method for forming a hermetically sealed cavity

Manufacturing a semiconductor device involves forming () a sacrificial layer where a micro cavity is to be located, forming () a metal layer of thickness greater than 1 micron over the sacrificial layer, forming () a porous layer from the metal layer, the porous layer having pores of length greater than ten times their breadth, and having a breadth in the range 10 nm-500 nanometers. The pores can be created by anodising, electrodeposition or dealloying. Then the sacrificial layer can be removed () through the porous layer, to form the micro cavity, and pores can be sealed (). Encapsulating MEMS devices with a porous layer can reduce costs by avoiding using photolithography for shaping the access holes since the sacrificial layer is removed through the porous membrane.

Method for encapsulating a device in a microcavity

A method of depositing a structural SiGe layer is presented. The structural SiGe layer may be located on top of a sacrificial layer above a substrate. The substrate may contain a semiconductor device such as a CMOS electronic circuit. The presented method uses a silicon source and a germanium source in a reaction zone to grow the structural SiGe layer. Hydrogen is introduced into the reaction zone and it may be used to dilute the silicon source and the germanium source. The resultant reaction occurs at temperatures below 450 degrees C., thereby preventing degradation of electronic device and/or other devices/materials located in the substrate.

Method of producing microcystalline silicon germanium suitable for micromachining

A method is described for closing openings in a film, for example, in microelectronic process technology, whereby substantially no deposition material passes through the openings, which can be important if fragile micro devices are positioned under the openings. The closure of these openings can cause an underlying cavity to be hermetically sealed, in which an object can be located. In particular the method provides a way for hermetically sealing cavities under controlled atmosphere and pressure in the encapsulation and sealing processes of cavities comprising fragile content. The cavities may comprise for example Micro Electro Mechanical Systems (MEMS). The method may be used for encapsulating devices which may require a controlled atmosphere and pressure encapsulation such as micro accelerometers, micro gyroscopes, micro tubes, vibration micro sensors, micro mirrors, micro mechanical resonators or 'resonant strain gauges', micro mechanical filters, micro switches, micro electrical circuits, micro relays, Integrated Circuits with air gaps etc.

Method for the closure of openings in a film

Method and apparatus to obtain as-deposited polycrystalline and low-stress SiGe layers. These layers may be used in Micro Electro-Mechanical Systems (MEMS) devices or micromachined structures. Different parameters are analysed which effect the stress in a polycrystalline layer. The parameters include, without limitation: deposition temperature; concentration of semiconductors (e.g., the concentration of Silicon and Germanium in a SiGelayer, with x being the concentration parameter); concentration of dopants (e.g., the concentration of Boron or Phosphorous); amount of pressure; and use of plasma. Depending on the particular environment in which the polycrystalline SiGe is grown, different values of parameters may be used.

Method for depositing polycrystalline SiGe suitable for micromachining and devices obtained thereof

The present invention is related to a method for producing micromachined devices for use in Microelectromechanical Systems (MEMS), comprising the steps of providing a crystalline wafer, and processing from said wafer at least one micromachined device comprising at least one elongated opening and/or cavity, having a longitudinal axis, so that said longitudinal axis is at an angle to a direction which lies along the intersection of the front plane of the wafer and a cleavage plane, said cleavage plane being defined as a plane along which cleavage of the wafer is most likely to occur.

Method for producing micromachined devices and devices obtained thereof

Growing community of inventors

Herent, Belgium

Ann Witvrouw