Psiquantum Corp.

Ann Melnichuk

Yong Liang

Vimal Kumar Kamineni

Faraz Najafi

John Eugene Berg

John Elliott Ortmann, Jr

Eric Dudley

Vimal Kamineni

Nicholas V Licausi

Matteo Staffaroni

James Jay McMahon

George Kovall

Henrik Johansson

Alexey Vert

A photonic integrated circuit including a substrate, a plurality of oxide layers on the substrate, and various passive and active integrated optical components in the plurality of oxide layers. The integrated optical components include silicon nitride waveguides, a Pockets effect phase shifter (e.g., BaTiOphase shifter), a superconductive nanowire single photon detector (SNSPD), an optical isolation structure surrounding the SNSPD, a single photon generator, a thermal isolation structure, a heater, a temperature sensor, a photodiode for data communication (e.g., a Ge photodiode), or a combination thereof.

Method and structure to incorporate multiple low loss photonic circuit components

A device includes a substrate, a dielectric layer on the substrate, a waveguide within the dielectric layer, and a photodetector optically coupled to the waveguide. The photodetector is disposed above the waveguide layer and is monolithically integrated with the substrate. The photodetector is configured to operate at low temperatures, such as below about 50 K or about 20 K. In some embodiments, the monolithic photonic device includes thermal isolation structures and optical isolation structures. Techniques for manufacturing the monolithic photonic device, including the thermal isolation structures and optical isolation structures, are also described.

Photonic integrated circuit

In some embodiments a method comprises depositing a first silicon nitride layer on a top surface of a semiconductor wafer and forming one or more first gaps in the first silicon nitride layer. The one or more first gaps can relieve stress formed in the first silicon nitride layer. A first fill material is deposited on the first silicon nitride layer and the first silicon nitride layer is planarized. A second silicon nitride layer is deposited across the first silicon nitride layer and one or more second gaps are formed in the second silicon nitride layer. The one or more second gaps can relieve stress formed in the second silicon nitride layer. A second fill material is deposited across the second silicon nitride layer and the second silicon nitride layer is planarized.

Silicon nitride films having reduced interfacial strain

An optical device includes a substrate, a dielectric layer on the substrate, a waveguide within the dielectric layer, a light sensitive component (e.g., a photodetector) in the dielectric layer and coupled to the waveguide, and a plurality of light isolation structures in at least one of the substrate or the dielectric layer and configured to prevent stray light from reaching the light sensitive component. In some embodiments, a light isolation structure in the plurality of light isolation structures includes two opposing sidewalls and a filling material between the two opposing sidewalls. The two opposing sidewalls include an optical isolation layer. The filling material is characterized by a coefficient of thermal expansion (CTE) matching a CTE of at least one of the substrate or the dielectric layer.

Isolation of waveguide-integrated detectors using a back end of line process

A method of forming a film comprises growing, using a deposition system, at least a portion of the film and analyzing, using a RHEED instrument, the at least a portion of the film. Using a computer, data is acquired from the RHEED instrument that is indicative of a stoichiometry of the at least a portion of the film. Using the computer, adjustments to one or more process parameters of the deposition system are calculated to control stoichiometry of the film during subsequent deposition. Using the computer, instructions are transmitted to the deposition system to execute the adjustments of the one or more process parameters. Using the deposition system, the one or more process parameters are adjusted.

Fabrication of films having controlled stoichiometry using molecular beam epitaxy

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Rio Rancho, NM, United States of America

Ann Melnichuk