Sandisk Technologies Inc.

Samsung Electronics Co., Ltd.

Freescale Semiconductor,inc.

Ankit Gupta

Narendhiran Chinnaanangur Ravimohan

Kumar Abhishek

Ashish Goel

Chandan Gupta

Prathmesh Tandon

Keerthi Kiran Jagannathachar

Helik Kanti Thacker

Mithlesh Shrivas

Deokgu Yoon

Adrita Barari

Damini

Chappidi Sai Revanth Reddy

Payal Kriplani

Shankar Ramakrishnan

Atishay Kumar

Sai Revanth Reddy Chappidi

Rahul Sood

Deepak Yadav

A data storage device tracks information about the ages and read counts of blocks of memory, which are indicative of data retention and read disturb issues, respectively. The data storage device uses a machine-learning model to predict which blocks in the memory are likely to contain errors based on the tracked information, and a read scrub operation is performed only on those blocks. Limiting the number of blocks that are read scrubbed reduces read amplification and reduces the time required for the read scrub process.

Data storage device and method for read scrub with reduced read amplification

A data storage device can use a jump range to identify whether a new write command received from a host is part of a sequential stream of write commands even though the logical block address of the new write command is not sequential to the logical block addresses of those other commands. However, using a fixed jump range can result in a new random write command being misclassified as a sequential write command, or vice versa. To address this problem, the embodiments presented herein describe a data storage device that uses a dynamic jump range based on a pattern of write commands previously received from the host. Other embodiments are provided.

Data storage device and method for host-based dynamic jump range identification

A method for repairing a memory device with faulty memory cells. The method includes defining a RA environment comprising a location of each of the faulty memory cells and a plurality of SR and a plurality of SC. The method further includes repairing the faulty memory cells based on an RA training process using the defined RA environment and mapping of the location of each faulty memory cell with the plurality of SC or SR. The method further includes training, based on a determination that indicates the at least one faulty memory cell among the faulty memory cells is left unrepaired and the at least one SC or SR is remaining, a first NN to perform an action for repairing of the faulty memory cells such that a maximum number of faulty memory cells are reparable and a minimum number of SC and SR are utilized during the repairing.

Method and system for repairing faulty cells of memory device

A storage system and method for data-driven intelligent thermal throttling are provided. In one embodiment, the storage system comprises a memory and a controller. The controller is configured to determine a temperature of the memory, estimate a future temperature curve based on the temperature of the memory, and determine a memory throttling delay to apply based on the estimated future temperature curve. Other embodiments are provided.

Storage system and method for data-driven intelligent thermal throttling

A standby control circuit for an integrated circuit module includes a first control circuit that is responsive, in a normal operating mode of the integrated circuit module, to an asynchronous standby signal indicating a standby mode entry event to output a standby mode signal synchronous with a primary clock signal to indicate a standby operating mode of the integrated circuit module. The standby control circuit also includes a second control circuit which is responsive, in a reduced power mode of the integrated circuit module, to the asynchronous standby signal indicating the standby mode entry event to control the first control circuit to output the standby mode signal synchronous with a secondary clock signal to indicate the standby operating mode.

Standby control circuit and method

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Ghaziabad, India

Ankit Gupta