Applied Materials, Inc.

Aniruddha Pal

Martin Jeffrey Salinas

Jared Ahmad Lee

Imad Yousif

Paul Benjamin Reuter

Yao-Hung Yang

Andrew Nguyen

Valentin Nikolov Todorow

Tom K Cho

Siamak Salimian

Martin Jeff Salinas

Andrew S Yu

Victor H Calderon

Shagun P Maheshwari

Saurabh M Chaudhari

Dmitry Lubomirsky

Dien-Yeh Wu

Ankur Agarwal

James P Cruse

Ezra Robert Gold

Sudhir R Gondhalekar

Yikai Chen

Chien-Min Liao

Boon Sen Chan

Eric Ruhland

Scott Lin

King F Lee

Yu-Chi Yeh

Philip Wayne Nagle

Tianshu Li

A method for forming a part for a process chamber incorporates a substrate core in the part. The method may include performing a silicon carbide (SIC) deposition process on a substrate to form a SiC coating of approximately 1 mm to approximately 2 mm on all sides of the substrate to form a composite SiC structure where the substrate is composed of a stack of a plurality of substrates each with a thickness of approximately 1 mm to approximately 2 mm and separating the stack of the plurality of substrates of the composite SiC structure to form multiple composite structures where each multiple composite structure has an SiC coating on a top surface and on all side surfaces and a bottom surface of exposed substrate material.

Composite structures for semiconductor process chambers

Seal for an assembly in a vapor deposition chamber

Examples of the present invention provide an apparatus for transferring substrates and confining a processing environment in a chamber. One example provides a hoop assembly for use in a processing chamber. The hoop assembly includes a confinement ring defining a confinement region therein. A hoop body mates with the confinement ring. The hoop body is slanted to reduce a thickness across a diameter of the hoop body. Three or more lifting fingers are attached to the hoop body and extend downwards. Each of the three or more lifting fingers has a contact tip positioned radially inward from the hoop body to form a substrate support surface below and spaced apart from the confinement region.

Method and apparatus for substrate transfer and radical confinement

A sealing member is provided, including a plurality of nodes and a plurality of antinodes. Each sealing member can be rotated to expose nondamaged lobes for sealing, and prevents the sealing member from falling out of the lobed groove. A chamber is provided, including a groove that the sealing member is placed in. A method of rotating and placing the sealing member is provided, including a rotation to expose nondamaged portions of the sealing member.

Multinode multi-use O-ring and method for forming a seal

Embodiments of the present invention provide a dual load lock chamber capable of processing a substrate. In one embodiment, the dual load lock chamber includes a chamber body defining a first chamber volume and a second chamber volume isolated from one another. Each of the lower and second chamber volumes is selectively connectable to two processing environments through two openings configured for substrate transferring. The dual load lock chamber also includes a heated substrate support assembly disposed in the second chamber volume. The heated substrate support assembly is configured to support and heat a substrate thereon. The dual load lock chamber also includes a remote plasma source connected to the second chamber volume for supplying a plasma to the second chamber volume.

Abatement and strip process chamber in a dual loadlock configuration

Abatement and strip process chamber in a dual load lock configuration

A method of reclaiming a used seal includes boiling the used seal in a liquid, and after boiling the used seal in the liquid, baking the used seal. The boiling the used seal may include boiling for a predetermined boiling time in the liquid, and the baking the used seal may include baking the used seal for a predetermined bake time at a predetermined temperature.

Method of reclaiming a seal

Embodiments of the invention generally provide a cooling mechanism utilized in a plasma reactor that may provide efficient temperature control during a plasma process. In one embodiment, a cooling mechanism disposed in a plasma processing apparatus includes a coil antenna enclosure formed in a processing chamber, a coil antenna assembly disposed in the coil antenna enclosure, a plurality of air circulating elements disposed in the coil antenna enclosure adjacent to the coil antenna assembly, and a baffle plate disposed in the coil antenna enclosure below and adjacent to the coil antenna assembly.

Cooling mechanism utilized in a plasma reactor with enhanced temperature regulation

Embodiments of the present invention provide an apparatus for transferring substrates and confining a processing environment in a chamber. One embodiment of the present invention provides a hoop assembly for using a processing chamber. The hoop assembly includes a confinement ring defining a confinement region therein, and three or more lifting fingers attached to the hoop. The three or more lifting fingers are configured to support a substrate outside the inner volume of the confinement ring.

Cooling mechanism utlized in a plasma reactor with enhanced temperature regulation

The present disclosure relates to an apparatus for heating and supporting a substrate in a processing chamber. A substrate support assembly includes a heated plate having a substrate supporting surface on a front side and a cantilever arm extending from a backside of the heated plate. The heated plate is configured to support and heat a substrate on the substrate supporting surface. The cantilever arm has a first end attached to the heated plate near a central axis of the heated plate, and a second end extending radially outwards from the central axis.

Thin heated substrate support

Apparatus for processing semiconductors are provided herein. In some embodiments, an apparatus for processing a substrate may include: a first ring disposed concentrically about a substrate support, the first ring configured to position a substrate atop the substrate support during processing; and a second ring disposed between the substrate support and the first ring, the second ring configured to provide a heat transfer path from the first ring to the substrate support.

Thermal management of edge ring in semiconductor processing

Apparatus for the delivery of a gas to a chamber and methods of use thereof are provided herein. In some embodiments, a gas distribution system for a process chamber may include a body having a first surface configured to couple the body to an interior surface of a process chamber, the body having a opening disposed through the body; a flange disposed proximate a first end of the opening opposite the first surface of the body, the flange extending inwardly into the opening and configured to support a window thereon; and a plurality of gas distribution channels disposed within the body and fluidly coupling a channel disposed within the body and around the opening to a plurality of holes disposed in the flange, wherein the plurality of holes are disposed radially about the flange.

Apparatus for radial delivery of gas to a chamber and methods of use thereof

Growing community of inventors

Santa Clara, CA, United States of America

Aniruddha Pal