International Business Machines Corporation

Aniruddha Konar

Mohit Bajaj

Kota V R M Murali

Edward J Nowak

Suresh Gundapaneni

Narasimha R Mavilla

Rajan K Pandey

Kumar R Virwani

Arpan K Deb

The present disclosure relates to semiconductor structures and, more particularly, to a symmetric tunnel field effect transistor and methods of manufacture. The structure includes a gate structure including a source region and a drain region both of which comprise a doped VOregion.

Symmetric tunnel field effect transistor

The present invention relates generally to high current density access devices (ADs), and more particularly, to a structure and method of forming tunable voltage margin access diodes in phase change memory (PCM) blocks using layers of copper-containing mixed ionic-electronic conduction (MIEC) materials. Embodiments of the present invention may use layers MIEC material to form an access device that can supply high current-densities and operate reliably while being fabricated at temperatures that are compatible with standard BEOL processing. By varying the deposition technique and amount of MIEC material used, the voltage margin (i.e. the voltage at which the device turns on and the current is above the noise floor) of the access device may be tuned to specific operating conditions of different memory devices.

Tunable voltage margin access diodes

Embodiments of the present disclosure provide an integrated circuit (IC) structure, which can include: a doped semiconductor layer having a substantially uniform doping profile; a first gate structure positioned on the doped semiconductor layer; and a second gate structure positioned on the doped semiconductor layer, the second gate structure including a metal-insulator transition material and a gate dielectric layer separating the metal-insulator transition material from the doped semiconductor layer.

Junctionless tunnel FET with metal-insulator transition material

Junctionless tunnel fet with metal-insulator transition material

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Bengaluru, India

Aniruddha Konar