Lam Research Corporation

Aniruddha Joi

Yezdi N Dordi

Eugenijus Norkus

Dries Dictus

Aldona Jagminiene

Ina Stankeviciene

Loreta Tamasauskaite-Tamasiunaite

Kailash Venkatraman

Steven James Madsen

Eric A Hudson

Nikhil Dole

Merrett Wong

Albina Zieliene

Ernest Chen

Zita Sukackiene

Jay Sheth

A method for performing an etch process on a substrate includes applying a bias signal and a source signal to an electrode of a plasma processing system. The bias signal and the source signal are pulsed RF signals that together define a repeated pulsed RF cycle, wherein each pulsed RF cycle sequentially includes a first state, a second state, a third state, and a fourth state. The power level of the bias signal in the first state is greater than in the third state, which is greater than in the second state, which is greater than in the fourth state. The power level of the source signal in the first state is greater than in the third state, which is greater than in the second state, which is greater than in the fourth state.

Multiple state pulsing for high aspect ratio etch

A method for forming a self-forming barrier in a feature of a substrate is provided, including the following operations: depositing a metallic liner in the feature of the substrate, the metallic liner being deposited over a dielectric of the substrate; depositing a zinc-containing precursor over the metallic liner; performing a thermal soak of the substrate; repeating the depositing of the zinc-containing precursor and the thermal soak of the substrate for a predefined number of cycles; wherein the method forms a zinc-containing barrier layer at an interface between the metallic liner and the dielectric.

Zincating and doping of metal liner for liner passivation and adhesion improvement

A method comprises depositing a barrier layer on a dielectric layer to prevent oxidation of a metal layer to be deposited by electroplating due to an oxide present in the dielectric layer and depositing a doped liner layer on the barrier layer to bond with the metal layer to be deposited on the liner layer by the electroplating. The dopant forms a protective passivation layer on a surface of the liner layer and dissolves during the electroplating so that the metal layer deposited on the liner layer by the electroplating bonds with the liner layer. The dopant reacts with the dielectric layer and forms a layer of a compound between the barrier layer and the dielectric layer. The compound layer prevents oxidation of the barrier layer and the liner layer due to the oxide present in the dielectric layer and adheres the barrier layer to the dielectric layer.

Metal liner passivation and adhesion enhancement by zinc doping

A method is provided, including the following operations: depositing a liner in a feature of a substrate; depositing a monolayer of zinc over the liner; after depositing the monolayer of zinc, performing a thermal treatment on the substrate, wherein the thermal treatment is configured to cause migration of the zinc to an interface of the liner and an oxide layer of the substrate, the migration of the zinc producing an adhesive barrier at the interface that improves adhesion between the liner and the oxide layer of the substrate; repeating the operations of depositing the monolayer of zinc and performing the thermal treatment until a predefined number of cycles is reached.

Electrochemical doping of thin metal layers employing underpotential deposition and thermal treatment

A method of performing electroless electrochemical atomic layer deposition is provided and includes: providing a substrate including an exposed upper metal layer; exposing the substrate to a first precursor solution to create a sacrificial metal monolayer on the exposed upper metal layer via underpotential deposition, where the first precursor solution is an aqueous solution including a reducing agent; subsequent to the forming of the sacrificial metal monolayer, rinsing the substrate; subsequent to the rinsing of the substrate, exposing the substrate to a second precursor solution to replace the sacrificial metal monolayer with a first deposition layer; and subsequent to replacing the sacrificial metal monolayer with the first deposition layer, rinsing the substrate. The exposure of the substrate to the first precursor solution and the exposure of the substrate to the second precursor solution are electroless processes.

Selective electroless electrochemical atomic layer deposition in an aqueous solution without external voltage bias

Layer-by-layer thickness control of an electroplated film can be achieved by using a cyclic deposition process. The cyclic process involves forming a layer (or partial layer) of hydrogen on a surface of the substrate, then displacing the layer of hydrogen with a layer of metal. These steps are repeated a number of times to deposit the metal film to a desired thickness. Each step in the cycle is self-limiting, thereby enabling atomic level thickness control.

Layer-by-layer deposition using hydrogen

A method is provided, including the following operations: depositing a ruthenium liner in a feature of a substrate; depositing a monolayer of zinc over the ruthenium liner; after depositing the monolayer of zinc, performing a thermal treatment on the substrate, wherein the thermal treatment is configured to cause migration of the zinc to an interface of the ruthenium liner and an oxide layer of the substrate, the migration of the zinc producing an adhesive barrier at the interface that improves adhesion between the ruthenium liner and the oxide layer of the substrate; repeating the operations of depositing the monolayer of zinc and performing the thermal treatment until a predefined number of cycles is reached.

A method is provided, including the following operations: performing a deposition process on a substrate, the deposition process configured to deposit a ruthenium layer in a feature on the substrate, the ruthenium layer being doped with zinc at an atomic percentage less than approximately 30 percent; after depositing the ruthenium layer, annealing the substrate, wherein the annealing is configured to cause migration of the zinc to an interface of the ruthenium layer and an oxide layer of the substrate, the migration of the zinc producing an adhesive barrier at the interface that inhibits electromigration of the ruthenium layer.

Self-forming barrier process

A method is provided, including the following operations: performing a deposition process on a substrate, the deposition process configured to deposit a copper layer in a feature on the substrate, the copper layer being doped with zinc at an atomic percentage less than approximately 30 percent; after depositing the copper layer, annealing the substrate, wherein the annealing is configured to cause migration of the zinc to an interface of the copper layer and an oxide layer of the substrate, the migration of the zinc producing an adhesive barrier at the interface that inhibits electromigration of the copper layer.

A solution for electroless deposition of platinum is provided. The solution comprises Coions, Ptions, and amine ligands. A ratio of Coto Ption is between 100:1 and 2:1. The solution allows for electroless deposition of platinum without requiring high temperatures and high pH. The solution allows for the deposition of a pure platinum layer.

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A method for selectively depositing a ferromagnetic layer on a conducting layer, includes providing a substrate including a conducting layer; preparing a solution including a metal salt; adding a complexing agent to the solution; adding a reducing agent to the solution; while a temperature of the solution is less than 75&#xb0; C., immersing the substrate in the solution for a predetermined period to deposit a ferromagnetic layer on the conducting layer by electroless deposition, wherein the ferromagnetic layer comprises one of cobalt (Co), iron (Fe) or CoFe; and after the predetermined period, removing the substrate from the solution.

Selective deposition and co-deposition processes for ferromagnetic thin films

A method for providing an electroless plating of a platinum containing layer is provided. A Tistabilization solution is provided. A Ptstabilization solution is provided. A flow from the Tistabilization solution is combined with a flow from the Ptstabilization solution and water to provide a diluted mixture of the Tistabilization solution and the Ptstabilization solution. A substrate is exposed to the diluted mixture of the Tistabilization solution and the Ptstabilization solution.

Electroless deposition of continuous platinum layer

A solution for electroless deposition of cobalt is provided. A reducing agent of Tiions is provided to the solution. Coions are provided to the solution.

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Aniruddha Joi