Qualcomm Incorporated

Animesh Datta

Seid Hadi Rasouli

Ohsang Kwon

Qi Ye

Prayag Bhanubhai Patel

Kamesh Medisetti

Steven James Dillen

Michael J Brunolli

Mickael Malabry

Christine Sung-An Hau-Riege

Jay Madhukar Shah

Nikolay Bomshtein

Sucheta Kumar Harish

Prathiba Balasubramanian

Xiangdong Chen

Martin Saint-Laurent

Pratyush Kamal

Foua Vang

Satyanarayana Sahu

Zhengyu Duan

Dexter Tamio Chun

Lalan Jee Mishra

Mohamed Hassan Abu-Rahma

Venugopal Boynapalli

Ramaprasath Vilangudipitchai

Esin Terzioglu

Xiaonan Zhang

Giridhar Nallapati

Venkatasubramanian Narayanan

William Goodall, Iii

Renukprasad Hiremath

Bo Pang

Saravanan Marimuthu

Divya Gangadharan

Chethan Swamynathan

Peeyush Kumar Parkar

Varun Verma

Chih-lung Kao

Sachin Bapat

Chih-Iung Kao

Vijayalakshmi Ranganna

Praveen Narendranath

William James Goodall Iii

Michael Joseph Brunolli

A CMOS device with a plurality of PMOS transistors each having a PMOS drain and a plurality of NMOS transistors each having an NMOS drain includes a first interconnect and a second interconnect. The first interconnect is on an interconnect level extending in a length direction to connect the PMOS drains together, and the second interconnect is on the interconnect level extending in the length direction to connect the NMOS drains together. A set of interconnects on at least one additional interconnect level physically couple the first interconnect and the second interconnect to an output of the CMOS device. A third interconnect on the interconnect level extends perpendicular to the length direction and offset from the set of interconnects. The third interconnect is capable of flowing current from the PMOS drains or from the NMOS drains to the output of the CMOS device.

Layout construction for addressing electromigration

A first interconnect on an interconnect level connects a first subset of PMOS drains together of a CMOS device. A second interconnect on the interconnect level connects a second subset of the PMOS drains together. The second subset of the PMOS drains is different than the first subset of the PMOS drains. The first interconnect and the second interconnect are disconnected on the interconnect level. A third interconnect on the interconnect level connects a first subset of NMOS drains together of the CMOS device. A fourth interconnect on the interconnect level connects a second subset of the NMOS drains together. The second subset of the NMOS drains is different than the first subset of the NMOS drains. The third interconnect and the fourth interconnect are disconnected on the interconnect level. The first, second, third, and fourth interconnects are coupled together through at least one other interconnect level.

A CMOS device with a plurality of PMOS transistors and a plurality of NMOS transistors includes a first interconnect and a second interconnect on an interconnect level connecting a first subset and a second subset of PMOS drains together, respectively. The first and second subsets are different and the first and second interconnect are disconnected on the interconnect level. A third interconnect and a fourth interconnect on the interconnect level connect a first subset and a second subset of the NMOS drains together, respectively. The third interconnect and the fourth interconnect are disconnected on the interconnect level. The first, second, third, fourth interconnects are coupled together through at least one other interconnect level. Additional interconnects on the interconnect level connect the first and third interconnects together, and the second and fourth interconnects together, to provide parallel current paths with a current path through the at least one other interconnect level.

A first interconnect on an interconnect level connects a first subset of PMOS drains together of a CMOS device. A second interconnect on the interconnect level connects a second subset of the PMOS drains together. The second subset of the PMOS drains is different than the first subset of the PMOS drains. The first interconnect and the second interconnect are disconnected on the interconnect level. A third interconnect on the interconnect level connects a first subset of NMOS drains together of the CMOS device. A fourth interconnect on the interconnect level connects a second subset of the NMOS drains together. The second subset of the NMOS drains is different than the first subset of the NMOS drains. The third interconnect and the fourth interconnect are disconnected on the interconnect level. The first, second, third, and fourth interconnects are coupled together though at least one other interconnect level.

A method and an apparatus for wireless communication are provided. The apparatus having a first latch having a first latch input and first latch output and a second latch having a second latch input, a second latch scan output, and a second latch data output. The second latch input is coupled to the first latch output. The apparatus further includes a selection component configured to select between a data input and a scan input based on a shift input. The selection component is coupled to the first latch input. The selection component includes a first NAND-gate, a second NAND-gate, and an OR-gate.

Area efficient flip-flop with improved scan hold-margin

The apparatus may include a first latch configured to store a first state or a second state. The first latch may have a first latch input, one of a set input or a reset input, a first pulse clock input, and a first latch output. The first latch input may be coupled to a fixed logic value. The one of the set input or the reset input may be coupled to a clock signal or an inverted clock signal, respectively. The apparatus may include an AND gate having a first AND gate input, a second AND gate input, and a first AND gate output. The clock signal may be coupled to the first AND gate input. The first latch output may be coupled to the second AND gate input. The AND gate output may be configured to output a pulsed clock. The pulsed clock may be coupled to the first pulse clock input.

Pulse-generator

A CMOS device with a plurality of PMOS transistors each having a PMOS drain and a plurality of NMOS transistors each having an NMOS drain includes a first interconnect on an interconnect level extending in a length direction to connect the PMOS drains together. A second interconnect on the interconnect level extends in the length direction to connect the NMOS drains together. A set of interconnects on at least one additional interconnect level couple the first interconnect and the second interconnect together. A third interconnect on the interconnect level extends perpendicular to the length direction and is offset from the set of interconnects to connect the first interconnect and the second interconnect together.

A low clock power data-gated flip-flop is provided. The data-gated flip-flop includes an exclusive OR component including a first exclusive OR input, a second exclusive OR input, and a first exclusive OR output. The first exclusive OR input is configured to receive a data input to the data-gated flip-flop. The data-gated flip-flop includes a first latch including a first latch data input and a first latch reset input, the first exclusive OR output being coupled to the first latch data input and the first latch reset input. The data-gated flip-flop includes a second latch having a data output, the data output coupled to the second exclusive OR input.

Low clock power data-gated flip-flop

A synchronous data-link throughput enhancement technique based on data signal duty-cycle and phase modulation demodulation is disclosed. A method includes receiving multiple bits to be transmitted, encoding the multiple bits to generate a multi-bit signal that represents the multiple bits, and transmitting, via a synchronous interface, the multi-bit signal during a time period that corresponds to one-half of a cycle of a synchronization signal.

Synchronous data-link throughput enhancement technique based on data signal duty-cycle and phase modulation/demodulation

In one embodiment, a method for signal delay in a scan path comprises, in a scan mode, delaying a scan signal in the scan path by propagating the scan signal through a plurality of delay devices coupled in series, wherein a first one of the delay devices is powered by a first voltage, a second one of the delay devices is powered by a second voltage, and the second voltage is greater than the first voltage. The method also comprises, in a functional mode, disabling the delay devices.

Circuit techniques for efficient scan hold path design

A circuit including a logic gate responsive to a clock signal and to a control signal. The circuit also includes a master stage of a flip-flop. The circuit further includes a slave stage of the flip-flop responsive to the master stage. The circuit further includes an inverter responsive to the logic gate and configured to output a delayed version of the clock signal. An output of the logic gate and the delayed version of the clock signal are provided to the master stage and to the slave stage of the flip-flop. The master stage is responsive to the control signal to control the slave stage.

Flip-flop with reduced retention voltage

A MOS device includes a first latch configured with one latch feedback F and configured to receive a latch input I and a latch clock C. The first latch is configured to output Q, where the output Q is a function of CF, IF, and I, and the latch feedback F is a function of the output Q. The first latch may include a first set of transistors stacked in series in which the first set of transistors includes at least five transistors. The MOS device may further include a second latch coupled to the first latch. The second latch may be configured as a latch in a scan mode and as a pulse latch in a functional mode. The first latch may operate as a master latch and the second latch may operate as a slave latch during the scan mode.

Compact design of scan latch

A CGC includes an enable module and a latch module. The enable module has an enable module input and an enable module output. The latch module has latch module inputs and a latch module output. The latch module inputs include a latch module clock input for receiving a clock and a latch module enable input for receiving the enable module output. The latch module enable input is coupled to the enable module output. The latch module is configured to enable and to disable the clock via the latch module output based on the enable module input. The latch module includes an internal enable node that is the latch module output. The latch module is configured to cause the internal enable node to transition from low to high as a function of the enable module output and &#x112;C, where E is the internal enable node and C is the clock.

Clock-gating cell with low area, low power, and low setup time

Growing community of inventors

San Diego, CA, United States of America

Animesh Datta