Micron Technology Incorporated

Anilkumar Rameshbhai Sindhi

Rakeshkumar Dayabhai Vaghasiya

Dhruv Chauhan

Mani Raghavendra Aravapalli

Methods, systems, and devices for zone write operation techniques are described. A memory system may support zone write operations directly to a multiple-level cell cursor of the memory system. For example, the memory system may close a first zone associated with storing a first type of information from being written with additional information. Based on closing the first zone, the memory system may determine a rate at which the first type of information is written to the memory system. The memory system may receive a command to write second information of the first type to a second zone of the memory system. To write the second information to the second zone, the memory system may write the second information to a cursor configured to store information written to the second zone, and the cursor may be associated with multiple-level memory cells based on the first rate.

Zone write operation techniques

Methods, systems, and devices for sequential write operations using multiple memory dies are described. A memory system may be configured to support write operations that include writing respective subsets of a sequence of data to each first memory die of a set of multiple first memory dies, and then writing the sequence of data to a second memory die (e.g., based on reading the respective subsets of the sequence of data from the set of first memory dies). In some examples, such techniques may be implemented with memory dies having different memory cell storage densities. For example, the set of multiple first memory dies may be operated in accordance with relatively lower storage densities to leverage relatively faster access operations, whereas the second memory die may be operated in accordance with a relatively higher storage density to leverage relatively higher capacity.

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Hyderabad Telangana, India

Anilkumar Rameshbhai Sindhi