Intermolecular, Inc.

Globalfoundries Inc.

Tesla, Inc.

Anh Duong

Olov B Karlsson

Chi-I Lang

Tony P Chiang

Jinhong Tong

Zachary M Fresco

Nitin Kumar

Clemens Fitz

Sandra Guy Malhotra

Errol Todd Ryan

James Mavrinac

Thomas R Boussie

John S Foster

Sean Barstow

Bei Li

Indranil De

Remy D Labesque

Usha Raghuram

John Liu

Tanya Andreeva Atanasova

Chen Wang

Yongkee Chae

Milan Padilla

Yangsen Kang

Reiner Willeke

Anna Tsizelmon

Karl Anthony Littau

Minh Le

Zhi-Wen Sun

Alexander A Gorer

Seon-Mee Cho

Nikhil D Kalyankar

Sang M Lee

Zhendong Hong

Nicole Rutherford

Jingang Su

Chi-l Lang

Sven Metzger

Stuart Brinkley

Ashley Lacey

Anna Tsimelzon

Majid Gharghi

Greg Nowling

One embodiment can provide a photovoltaic roof tile. The photovoltaic roof tile can include a transparent front cover, a transparent back cover, and a plurality of polycrystalline-Si-based photovoltaic structures positioned between the front cover and the back cover. A respective polycrystalline-Si-based photovoltaic structure has a front surface facing the front cover and a back surface facing the back cover. The photovoltaic roof tile can further include a paint layer positioned on a back surface of the back cover facing away from the front cover. A color of the paint layer substantially matches a color of the front surface of the respective polycrystalline-Si-based photovoltaic structure.

System and method for improving color appearance of solar roofs

A method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process is disclosed, including a multi-step residue cleaning, including exposing the substrate to an aqua regia solution, followed by an exposure to a solution having hydrochloric acid and hydrogen peroxide. The SC2 solution can further react with remaining platinum residues, rendering it more soluble in an aqueous solution and thereby dissolving it from the surface of the substrate.

Aqua regia and hydrogen peroxide HCL combination to remove Ni and NiPt residues

Copper can be etched with selectivity to Ta/TaN barrier liner and SiC hardmask layers, for example, to reduce the potential copper contamination. The copper film can be recessed more than the liner to further enhance the protection. Wet etch solutions including a mixture of HF and HSOcan be used for selective etching copper with respect to the liner material, for example, the copper film can be recessed between 2 and 3 nm, and the barrier liner film can be recessed between 1.5 and 2 nm.

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A co-sputter technique is used to deposit In&#x2014;Ga&#x2014;Zn&#x2014;O films using PVD. The films are deposited in an atmosphere including both oxygen and argon. A heater setpoint of about 300 C results in a substrate temperature of about 165 C. One target includes an alloy of In, Ga, Zn, and O with an atomic ratio of In:Ga:Zn of about 1:1:1. The second target includes a compound of zinc oxide. The films exhibit the c-axis aligned crystalline (CAAC) phase in an as-deposited state, without the need of a subsequent anneal treatment.

Method to grow in-situ crystalline IGZO using co-sputtering targets

Methods of modifying a patterned semiconductor substrate are presented including: providing a patterned semiconductor substrate surface including a dielectric region and a conductive region; and applying an amphiphilic surface modifier to the dielectric region to modify the dielectric region. In some embodiments, modifying the dielectric region includes modifying a wetting angle of the dielectric region. In some embodiments, modifying the wetting angle includes making a surface of the dielectric region hydrophilic. In some embodiments, methods further include applying an aqueous solution to the patterned semiconductor substrate surface. In some embodiments, the conductive region is selectively enhanced by the aqueous solution. In some embodiments, methods further include providing the dielectric region formed of a low-k dielectric material. In some embodiments, applying the amphiphilic surface modifier modifies an interaction of the low-k dielectric region with a subsequent process.

Methods for coating a substrate with an amphiphilic compound

Copper can be etched with selectivity to Ta/TaN barrier liner and SiC hardmask layers, for example, to reduce the potential copper contamination. The copper film can be recessed more than the liner to further enhance the protection. Wet etch solutions including a mixture of HF and HCl can be used for selective etching copper with respect to the liner material, for example, the copper film can be recessed between 2 and 3 nm, and the barrier liner film can be recessed between 1.5 and 2 nm.

Method to etch cu/Ta/TaN selectively using dilute aqueous Hf/hCl solution

Methods for wet etching a UBM layer and the resulting devices are disclosed. Embodiments may include patterning metal bumps on a wafer that has at least two metal layers thereon; exposing the wafer to a first acid solution to remove a portion of a first of the two metal layers exposed by the patterning of the metal bumps; and exposing the wafer to a second acid solution to remove a portion a second of the two metal layers exposed by the patterning of the metal bumps and the exposure of the wafer to the first acid solution, wherein an undercut below the metal bumps, formed by removal of the portions of the first and second metal layers, is less than 1.5 microns.

Etching of under bump mettallization layer and resulting device

Methods for etching copper in the fabrication of integrated circuits are disclosed. In one exemplary embodiment, a method for fabricating an integrated circuit includes providing an integrated circuit structure including a copper bump structure and a copper seed layer underlying and adjacent to the copper bump structure and etching the seed layer selective to the copper bump structure using a wet etching chemistry consisting of HPOin a volume percentage of about 0.07 to about 0.36, HOin a volume percentage of about 0.1 to about 0.7, and a remainder of HO, and optionally NHOH.

Methods for etching copper during the fabrication of integrated circuits

Method to etch Cu/Ta/TaN selectively using dilute aqueous HF/HCI solution

Wet-etch solutions for conductive metals (e.g., copper) and metal nitrides (e.g., tantalum nitride) can be tuned to differentially etch the conductive metals and metal nitrides while having very little effect on nearby oxides (e.g., silicon dioxide hard mask materials), and etching refractory metals (e.g. tantalum) at an intermediate rate. The solutions are aqueous base solutions (e.g., ammonia-peroxide mixture or TMAH-peroxide mixture) with just enough hydrofluoric acid (HF) added to make the solution's pH about 8-10. Applications include metallization of sub-micron logic structures.

Selective etching of copper and copper-barrier materials by an aqueous base solution with fluoride addition

Aqua regia and hydrogen peroxide HCI combination to remove Ni and NiPt residues

A composition for removing photoresist and bottom anti-reflective coating from a semiconductor substrate is disclosed. The composition may comprise a nontoxic solvent, the nontoxic solvent having a flash point above 80 degrees Celsius and being capable of dissolving acrylic polymer and phenolic polymer. The composition may further comprise Tetramethylammonium Hydroxide (TMAH) mixed with the nontoxic solvent.

Composition and method for removing photoresist and bottom anti-reflective coating for a semiconductor substrate

A composition of matter and method to remove excess material during the manufacturing of semiconductor devices includes providing a substrate; applying a metal chelator mixture to the substrate, where the metal chelator mixture comprising a metal chelator and a solvent, where the metal chelator binds to the platinum residue, to render the platinum residue soluble; and rinsing the metal chelator mixture from the substrate to remove the platinum residue from the silicide.

Composition and method to remove excess material during manufacturing of semiconductor devices

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Fremont, CA, United States of America

Anh Duong