University of Illinois

Other

Lawrence Livermore National Security, LLC

Beijing Apollo Ding Rong Solar Technology Co., Ltd.

Angus A Rockett

John A Rogers

Ralph G Nuzzo

Jongseung Yoon

John Frederick Corson

Neil Mackie

Vincenzo Lordi

Weijie Zhang

Joel Varley

Geordie Zapalac

Xiaoqing He

Li-Chung Yang

John A Thornton, Deceased

Timothy Lommasson

A method of manufacturing a photovoltaic structure includes forming a p-type semiconductor absorber layer containing a copper indium gallium selenide based material over a first electrode, forming a n-type cadmium sulfide layer over the p-type semiconductor absorber layer by sputtering in an ambient including hydrogen gas and oxygen gas, and forming a second electrode over the cadmium sulfide layer.

Hexagonal phase epitaxial cadmium sulfide on copper indium gallium selenide for a photovoltaic junction

Provided are solar cells, photovoltaics and related methods for making solar cells, wherein the solar cell is made of ultrathin solar grade or low quality silicon. In an aspect, the invention is a method of making a solar cell by providing a solar cell substrate having a receiving surface and assembling a printable semiconductor element on the receiving surface of the substrate via contact printing. The semiconductor element has a thickness that is less than or equal to 100 &#x3bc;m and, for example, is made from low grade Si.

Arrays of ultrathin silicon solar microcells

Multi-phase, single layer, non-interdiffusing M-Mo back contact metallized films, where M is selected from Cu, Ga, or mixtures thereof, for CIS cells are deposited by a sputtering process on suitable substrates, preferably glass or alumina, to prevent delamination of the CIS from the back contact layer. Typical CIS compositions include CuXSe.sub.2 where X is In or/and Ga. The multi-phase mixture is deposited on the substrate in a manner to provide a columnar microstructure, with micro-vein Cu or/and Ga regions which partially or fully vertically penetrate the entire back contact layer. The CIS semiconductor layer is then deposited by hybrid sputtering and evaporation process. The Cu/Ga-Mo deposition is controlled to produce the single layer two-phase columnar morphology with controllable Cu or Ga vein size less than about 0.01 microns in width. During the subsequent deposition of the CIS layer, the columnar Cu/Ga regions within the molybdenum of the Cu/Ga-Mo back layer tend to partially leach out, and are replaced by columns of CIS. Narrower Cu and/or Ga regions, and those with fewer inner connections between regions, leach out more slowly during the subsequent CIS deposition. This gives a good mechanical and electrical interlock of the CIS layer into the Cu/Ga-Mo back layer. Solar cells employing In-rich CIS semiconductors bonded to the multi-phase columnar microstructure back layer of this invention exhibit vastly improved photo-electrical conversion on the order of 17% greater than Mo alone, improved uniformity of output across the face of the cell, and greater Fill Factor.

Multi-phase back contacts for CIS solar cells

The invention provides a method and apparatus for depositing alloy films useful in manufacturing photovoltaic solar cells. In the preferred embodiment an alloy comprising copper, indium, and selenium is deposited on a substrate. Sputtering is utilized to provide the copper and indium, with the selenium being provided by evaporization. Other alloys may also be formed using the disclosed apparatus and techniques.

Hybrid method for depositing semi-conductive materials

Growing community of inventors

Urbana, IL, United States of America

Angus A Rockett