Stmicroelectronics S.r.l.

Nokia Corporation

Stmicroelectronics (grenoble 2) Sas

Angelo Merassi

Sarah Zerbini

Benedetto Vigna

Ernesto Lasalandra

Guido Spinola Durante

Marco Mantovani

Biagio De Masi

Luca Coronato

Barbara Simoni

Angelo Pesci

Ernestino Galeazzi

Bruno Murari

Paolo Ferrari

Marco Ferrera

Marco Del Sarto

Mario Francesco Cortese

Alberto Corigliano

Andrea Rusconi Clerici Beltrami

Viola Fulvio

Hubert Geitner

A micro-electromechanical device includes a semiconductor substrate, in which a first microstructure and a second microstructure of reference are integrated. The first microstructure and the second microstructure are arranged in the substrate so as to undergo equal strains as a result of thermal expansions of the substrate. Furthermore, the first microstructure is provided with movable parts and fixed parts with respect to the substrate, while the second microstructure has a shape that is substantially symmetrical to the first microstructure but is fixed with respect to the substrate. By subtracting the changes in electrical characteristics of the second microstructure from those of the first, variations in electrical characteristics of the first microstructure caused by changes in thermal expansion or contraction can be compensated for.

Temperature-compensated micro-electromechanical device, and method of temperature compensation in a micro-electromechanical device

Methods of forming micro-electromechanical device include a semiconductor substrate, in which a first microstructure and a second microstructure of reference are integrated. The first microstructure and the second microstructure are arranged in the substrate so as to undergo equal strains as a result of thermal expansions of the substrate. Furthermore, the first microstructure is provided with movable parts and fixed parts with respect to the substrate, while the second microstructure has a shape that is substantially symmetrical to the first microstructure but is fixed with respect to the substrate. By subtracting the changes in electrical characteristics of the second microstructure from those of the first, variations in electrical characteristics of the first microstructure caused by changes in thermal expansion or contraction can be compensated for.

Method of manufacturing a temperature-compensated micro-electromechanical device

A micromechanical structure of a MEMS device, integrated in a die of semiconductor material provided with a substrate and having at least a first axis of symmetry lying in a horizontal plane, has a stator structure, which is fixed with respect to the substrate, and a rotor structure, having a suspended mass, mobile with respect to the substrate and to the stator structure as a result of an external action, the stator structure having fixed sensing electrodes capacitively coupled to the rotor structure; a compensation structure is integrated in the die for compensation of thermo-mechanical strains. The compensation structure has stator compensation electrodes, which are fixed with respect to the substrate, are capacitively coupled to the rotor structure, and are arranged symmetrically to the fixed sensing electrodes with respect to the first axis of symmetry.

MEMS device and corresponding micromechanical structure with integrated compensation of thermo-mechanical stress

A process for manufacturing a membrane of nozzles of a spray device, comprising the steps of laying a substrate, forming a membrane layer on the substrate, forming a plurality of nozzles in the membrane layer, forming a plurality of supply channels in the substrate, each supply channel being substantially aligned in a vertical direction to a respective nozzle of the plurality of nozzles and in direct communication with the respective nozzle.

Process for manufacturing an integrated membrane of nozzles in MEMS technology for a spray device and spray device using such membrane

A MEMS acoustic transducer, for example, a microphone, includes a substrate provided with a cavity, a supporting structure, fixed to the substrate, a membrane having a perimetral edge and a centroid, suspended above the cavity and fixed to the substrate the membrane configured to oscillate via the supporting structure. The supporting structure includes a plurality of anchorage elements fixed to the membrane, and each anchorage element is coupled to a respective portion of the membrane between the centroid and the perimetral edge of the membrane.

Integrated acoustic transducer in MEMS technology, and manufacturing process thereof

A semiconductor integrated device is provided with: a die having a body of semiconductor material with a front surface, and an active area arranged at the front surface; and a package having a support element carrying the die at a back surface of the body, and a coating material covering the die. The body includes a mechanical decoupling region, which mechanically decouples the active area from mechanical stresses induced by the package; the mechanical decoupling region is a trench arrangement within the body, which releases the active area from an external frame of the body, designed to absorb the mechanical stresses induced by the package.

Semiconductor integrated device with mechanically decoupled active area and related manufacturing process

A microelectromechanical sensor includes: a supporting structure, having at least one first electrode and one second electrode, which form a capacitor; and a sensing mass made of non-conductive material, which is arranged so as to interact with an electric field associated to the capacitor and is movable with respect to the supporting structure according to a degree of freedom so that a relative position of the sensing mass with respect to the first electrode and to the second electrode is variable in response to external stresses. The sensing mass is made of a material selected in the group consisting of: intrinsic semiconductor materials, oxides of semiconductor materials, and nitrides of semiconductor materials.

Microelectromechanical sensor with non-conductive sensing mass, and method of sensing through a microelectromechanical sensor

In a microelectromechanical device, a mobile mass is suspended above a substrate via elastic suspension elements and is rotatable about said elastic suspension elements, a cover structure is set above the mobile mass and has an internal surface facing the mobile mass, and a stopper structure is arranged at the internal surface of the cover structure and extends towards the mobile mass in order to stop a movement of the mobile mass away from the substrate along an axis (z) transverse to the substrate. The stopper structure is arranged with respect to the mobile mass so as to reduce an effect of reciprocal electrostatic interaction, in particular so as to minimize a resultant twisting moment of the mobile mass about the elastic suspension elements.

Z-axis microelectromechanical device with improved stopper structure

A microelectromechanical device has a mobile mass that undergoes a movement, in particular a spurious movement, in a first direction in response to an external event; the device moreover has a stopper structure configured so as to stop said spurious movement. In particular, a stopper element is fixedly coupled to the mobile mass and is configured so as to abut against a stopper mass in response to the spurious movement, thereby stopping it. In detail, the stopper element is arranged on the opposite side of the stopper mass with respect to a direction of the spurious movement, protrudes from the space occupied by the mobile mass and extends in the space occupied by the stopper mass, in the first direction.

Planar microelectromechanical device having a stopper structure for out-of-plane movements

A microelectromechanical sensing structure is provided with a mobile element adapted to be displaced as a function of a quantity to be detected, and first fixed elements, capacitively coupled to the mobile element and configured to implement with the mobile element first detection conditions. The sensing structure is further provided with second fixed elements, capacitively coupled to the mobile element and configured to implement with the mobile element second detection conditions, which are different from the first detection conditions. In particular, the first and second detection conditions differ with respect to a full-scale or a sensitivity value in the detection of the aforesaid quantity.

Microelectromechanical sensor having multiple full-scale and sensitivity values

An inertial sensor provided with a detection structure sensitive to a first, a second and a third component of acceleration along respective directions of detection, and generating respective electrical quantities as a function of said components of acceleration. The detection structure supplies at output a resultant electrical quantity obtained as combination of said electrical quantities, and correlated to the value of a resultant acceleration acting on the inertial sensor, given by a vector sum of the components of acceleration. In particular, the detection structure is of a microelectromechanical type, and comprises a mobile portion made of semiconductor material forming with a fixed portion a first, a second and a third detection capacitor, and an electrical-interconnection portion, connecting the detection capacitors in parallel; the resultant electrical quantity being the capacitance obtained from said connection in parallel.

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Vigevano, Italy

Angelo Merassi