Infineon Technologies Ag

Angelika Geiselbrechtinger

Carsten Ahrens

Reinhard Losehand

Christian Herzum

Wolfgang Hartung

A capacitor includes a semiconductor substrate in which a trench is formed through which the substrate is doped. A dielectric layer covers the surface of the trench, wherein furthermore an electrically conductive material is arranged in the trench. A first contact structure for contacting the electrically conductive material in the trench in an electrically conductive manner and a second contact structure for contacting the doped semiconductor substrate in an electrically conductive manner are also formed in the capacitor. The capacitor has low series resistance of the electrodes and may be produced in a simple manner.

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Grasbrunn, Germany

Angelika Geiselbrechtinger