Micron Technology Incorporated

Angela S Parekh

Kunal R Parekh

Mandy W Fortunati

Ariela E Gruszka

Teresa M Di Dio

A method of forming a microelectronic device comprises forming a first microelectronic device structure comprising a preliminary stack structure comprising sacrificial structures and insulative structures vertically alternating with the sacrificial structures. A second microelectronic device structure comprising control logic circuitry is formed. The first microelectronic device structure is attached to the second microelectronic device structure to form an assembly. After forming the assembly, the sacrificial structures are at least partially replaced with conductive structures to form a stack structure. Contact structures are formed to extend through the stack structure. One or more of the contact structures are coupled to the control logic circuitry. Conductive line structures are formed over the stack structure. One or more of the conductive line structures are coupled to the one or more of the contact structures. Microelectronic devices, memory devices, and electronic systems are also described.

Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems

A semiconductor device assembly is provided. The assembly includes a first semiconductor device including a plurality of electrical contacts on an upper surface thereof; a monolithic silicon structure having a lower surface in contact with the upper surface of the first semiconductor device, the monolithic silicon structure including a cavity extending from the lower surface completely through a body of the monolithic silicon structure to a top surface of the monolithic silicon structure; and a second semiconductor device disposed in the cavity, the second semiconductor device including a plurality of interconnects, each operatively coupled to a corresponding one of the plurality of electrical contacts.

Semiconductor device assemblies including monolithic silicon structures for thermal dissipation and methods of making the same

Methods and devices related to converting sign language are described. In an example, a method can include receiving, at a processing resource of a computing device via a radio of the computing device, first signaling including at least one of text data, audio data, or video data, or any combination thereof, converting, at the processing resource, at least one of the text data, the audio data, or the video data to data representing a sign language, generating, at the processing resource, different video data based at least in part on the data representing the sign language, wherein the different video data comprises instructions for display of a performance of the sign language, transmitting second signaling representing the different video data from the processing resource to a user interface, and displaying the performance of the sign language on the user interface in response to the user interface receiving the second signaling.

Converting sign language

The invention includes a number of methods and structures pertaining to integrated circuitry. The invention encompasses a method of forming an integrated circuit comprising: a) forming an insulative material layer over a first node location and a second node location, the insulative material layer having an uppermost surface; and b) forming first and second conductive pedestals extending through the insulative material layer and in electrical connection with the first and second node locations, the conductive pedestals comprising exposed uppermost surfaces which are above the uppermost surface of the insulative material layer. The invention also encompasses an integrated circuit comprising: a) a first node location and a second node location within a semiconductor substrate; b) a transistor gate electrically connecting the first and second node locations; c) an insulative material layer over the semiconductor substrate, the insulative material layer comprising an uppermost surface; d) a first conductive pedestal extending through the insulative material layer and in electrical connection with the first node location; e) a second conductive pedestal extending through the insulative material layer and in electrical connection with the second node location; f) the conductive pedestals comprising uppermost surfaces which are at a common elevational height relative to one another and are above the uppermost surface of the insulative material layer in a region proximate the pedestals.

Growing community of inventors

Boise, ID, United States of America

Angela S Parekh