Patent-treuhand-gesellschaft Fuer Elektrische Gluehlampen Mbh

Osram Gmbh

Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Patent Treuhand Gesellschaft Fur Elektrische Gluhlampen Mbh

Osram Ag

Osram Opto Semiconductor Gmbh

Oskam Oled Gmbh

Osram Sylvania Inc.

Angela Eberhardt

Michael Ilmer

Norwin Von Malm

Dominik Eisert

David J O'Brien

Alan Lenef

Daniel Steffen Setz

Ivar Tangring

Joerg Sorg

Madis Raukas

Michael Seibold

Florian Peskoller

Christina Wille

Jörg Frischeisen

Roland Hüttinger

Thomas Huckenbeck

Jürgen Bauer

Michael Schmidberger

Vera Stöppelkamp

Dennis Sprenger

Albert Schneider

James A Avallon

John F Kelso

Udo Custodis

Stefan Kotter

Jürgen Hager

Manfred Deisenhofer

Maximilian Vogl

Oliver Woisetschläger

Richard Scheicher

Ewald Poesl

Reinhold Schmidt

Joachim Wirth-Schoen

Vesna Mueller

Joachim Wirth-Schön

Hermann Speer

Pascal Rabenbauer

Nusret Sena Gueldal

Thomas Huettmayer

Christian Rüssel

Matthias Müller

Harald Strixner

Ewald Pösl

Ulrike Beer

David Johnston

In an embodiment an optoelectronic component includes a first joining partner including an LED chip with a structured light-emitting surface and a compensation layer applied to the light-emitting surface, wherein the compensation layer has a surface facing away from the light-emitting surface and spaced apart from the light-emitting surface, and wherein the surface forms a first connecting surface, a second joining partner having a second connecting surface, the first and second connecting surfaces being arranged such that they face each other and a bonding layer made of a film of low-melting glass having a layer thickness of not more than 1 μm, wherein the bonding layer bonds the first and second connecting surfaces together, wherein the structure of the light-emitting surface is embedded in the compensation layer, and wherein the first and second connecting surfaces are smooth such that their surface roughness, expressed as center-line roughness, is less than or equal to 50 nm.

Optoelectronic component with a transparent bond between two joining partners and method of manufacturing the same

The invention relates to a conversion element comprising a wavelength-converting conversion material, a matrix material in which the conversion material is inserted, and a substrate on which the matrix material and the conversion material are directly arranged, the matrix material comprising at least one condensed sol-gel material selected from the following group: water glass, metal phosphate, aluminium phosphate, monoaluminium phosphate, modified monoaluminium phosphate, alkoxytetramethoxysilane, tetraethyl orthosilicate, methyltrimethoxysilane, methyltriethoxysilane, titanium alkoxide, silica sol, metal alkoxide, metal oxane or metal alkoxane, the conversion element being arranged in the beam path of a laser source, the conversion element being mounted in a mechanically immobile manner in relation to the laser source, and the radiation of the laser source being dynamically arranged in relation to the conversion element.

Conversion elements comprising an infiltration matrix

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor layer sequence having an active region configured to emit radiation at least via a main radiation exit surface during operation and a self-supporting conversion element arranged in a beam path of the semiconductor layer sequence, wherein the self-supporting conversion element includes a substrate and subsequently a first layer, wherein the first layer includes at least one conversion material embedded in a matrix material, wherein the matrix material includes at least one condensed sol-gel material, wherein the condensed sol-gel material has a proportion between 10 and 70 vol % in the first layer, and wherein the substrate is free of the sol-gel material and the conversion material and mechanically stabilizes the first layer.

Optoelectronic component and method for producing an optoelectronic component

A conversion element, an optoelectronic component, an arrangement and a method for producing a conversion element are disclosed. In an embodiment an arrangement includes a conversion element having a wavelength converting conversion material, a matrix material in which the conversion material is embedded and a substrate on which the matrix material with the embedded conversion material is directly arranged, wherein at least one condensed sol-gel material, and a laser source configured to emit primary radiation during operation, wherein the conversion element is arranged in a beam path of the laser source, wherein the conversion element is mechanically immovably mounted with respect to the laser source, and wherein the primary radiation of the laser source is dynamically arranged to the conversion element.

Conversion element, optoelectronic component and method for producing a conversion element

A conversion element, an optoelectronic component, an arrangement and a method for producing a conversion element are disclosed. In an embodiment an arrangement includes a conversion element including a wavelength converting conversion material, a matrix material in which the conversion material is embedded and a substrate on which the matrix material with the embedded conversion material is directly arranged, wherein the matrix material comprises at least one condensed sol-gel material selected from the group consisting of water glass, metal phosphate, aluminum phosphate, monoaluminum phosphate, modified monoaluminum phosphate, alkoxytetramethoxysilane, tetraethylorthosilicate, methyltrimethoxysilane, methyltriethoxysilane, titanium alkoxide, silica sol, metal alkoxide, metal oxane, and metal alkoxane, and a laser source configured to emit primary radiation during operation, wherein the conversion element is arranged in a beam path of the laser source, wherein the conversion element is mechanically immovably mounted with respect to the laser source, and wherein the primary radiation of the laser source is dynamically arranged to the conversion element.

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment, an optoelectronic component includes a semiconductor layer sequence having an active region configured to emit radiation at least via a main radiation exit surface and a conversion element arranged directly downstream of the main radiation exit surface, wherein the conversion element is substrate-free and includes a first layer, wherein the first layer includes at least one conversion material embedded in a matrix material, wherein the matrix material includes at least one condensed inorganic sol-gel material selected from the following group consisting of water glass, metal phosphate, aluminum phosphate, modified monoaluminum phosphate, monoaluminum phosphate, alkoxytetramethoxysilane, tetraethylorthosilicate, methyltrimethoxysilane, methyltriethoxysilane, titanium alkoxide, silica sol, metal alkoxide, metal oxane, metal alkoxane, metal oxide, metal silicates, metal sulfates, and tungstates, and wherein the condensed sol-gel material has a proportion between 10 and 70 vol % in the first layer.

An optoelectronic component includes a semiconductor layer sequence having an active region that emits radiation during operation at least via a main radiation exit surface, and a self-supporting conversion element arranged in a beam path of the semiconductor layer sequence, wherein the self-supporting conversion element includes a substrate and a first layer, the first layer includes at least one conversion material embedded in a glass matrix, the glass matrix has a proportion of 50 to 80 vol. % in the first layer, the substrate is free of the glass matrix and the conversion material and mechanically stabilizes the first layer, and the first layer has a layer thickness of less than 200 &#x3bc;m.

Optoelectronic component and method of manufacturing an optoelectronic component

An optoelectronic semiconductor component having a light source, which emits primary radiation, a housing, and electrical terminals, wherein a conversion element, which is based on a matrix and at least two phosphors, is connected upstream of the optoelectronic semiconductor component. The matrix contains metal phosphate and preferably consists of metal phosphate. The phosphors partially or completely convert primary radiation. At least one first phosphor powder is embedded and fixed in a first inorganic matrix based on a metal phosphate, and at least one second phosphor powder is embedded and fixed in a second matrix based on a metal phosphate.

Optoelectronics semiconductor component

A glass composition, a device and a method for producing the device are disclosed. In an embodiment, the glass composition includes a tellurium oxide in a proportion of at least 65 mol. % and at most 90 mol. %, RO in a proportion between 0 mol. % and 20 mol. %, wherein Ris selected from Mg, Ca, Sr, Ba, Zn, Mn and combinations thereof and at least one MO in a proportion between 5 mol. % and 25 mol. %, wherein Mis selected from Li, Na, K and combinations thereof. The glass component further includes at least one ROin a proportion between 1 mol. % and 3 mol. %, wherein Ris selected from Al, Ga, In, Bi, Sc, Y, La, rare earths and combinations thereof, and MOin a proportion between 0 mol. % and 2 mol. %, wherein Mis selected from Ti, Zr, Hf and combinations thereof.

Glass composition, component, and method for producing a component

Various embodiments may relate to a process for producing a scattering layer for electromagnetic radiation. The process may include applying scattering centers onto a carrier, applying glass onto the scattering centers, and liquefying of the glass so that a part of the liquefied glass flows between the scattering centers toward the surface of the carrier, in such a way that a part of the liquefied glass still remains above the scattering centers.

Process for producing a scattering layer for electromagnetic radiation and scattering layer for scattering electromagnetic radiation

A conversion element, a component and a method for producing the component are disclosed. In an embodiment the conversion element includes a phosphor configured to convert electromagnetic primary radiation into electromagnetic secondary radiation and a glass composition as matrix material in which the phosphor is embedded. The glass composition has the following chemical composition: at least one tellurium oxide with a proportion of 65 mole % as a minimum and 90 mole % as a maximum, RO with a proportion of between 0 mole % and 20 mole %, at least one MO with a proportion of between 5 mole % and 25 mole %, at least one ROwith a proportion of between 1 mole % and 3 mole %, MOwith a proportion of between 0 mole % and 2 mole %, and ROwith a proportion of between 0 mole % and 6 mole %.

Conversion element, component and process for producing a component

An optoelectronic component may include a carrier, a protective layer on or above the carrier, a first electrode on or above the protective layer, an organic functional layer structure on or above the first electrode, and a second electrode on or above the organic functional layer structure. The protective layer has a lower transmission than the carrier for electromagnetic radiation having a wavelength of less than approximately 400 nm at least in one wavelength range. The protective layer includes a glass.

Optoelectronic component having a UV-protecting substrate and method for producing the same

A device for providing electromagnetic radiation may include a radiation arrangement for generating excitation radiation, and at least one conversion element for generating conversion radiation, which includes condensed metal phosphate and phosphors embedded in the condensed metal phosphate, and is arranged at a distance from the radiation arrangement in a beam path of the excitation radiation. The conversion element includes a silicatic matrix and alkali metal phosphate.

Device for supplying electromagnetic radiation

A radiation-emitting component includes a semiconductor chip and a conversion element. The semiconductor chip includes an active layer suitable for generating electromagnetic radiation and a radiation exit face. The conversion element includes a matrix material and a luminescent material. The conversion element is arranged downstream of the radiation exit face of the semiconductor chip. The matrix material comprises at least 40 wt. % tellurium oxide and is free of boron trioxide and/or germanium oxide. A method for producing such a radiation-emitting component is furthermore stated.

Radiation-emitting component with a semiconductor chip and a conversion element and method for the production thereof

An optoelectronic semiconductor part comprising a light source, a housing and electrical connections, wherein the optoelectronic semiconductor part comprises a component which contains metal phosphate, and wherein the metal phosphate is substantially alkali-free and halogen-free.

Optoelectronic semiconductor part containing alkali-free and halogen-free metal phosphate

Growing community of inventors

Augsburg, Germany

Angela Eberhardt