Silicon Storage Technology, Inc.

Anji Microelectronics (shanghai) Co., Ltd.

Anji Microelectronics Co., Ltd.

Andy Yang

Nhan Do

Xian Liu

Chunming Wang

Leo Xing

Guo Xiang Song

Chris Chang Yu

Jack Sun

Danny Zhenglong Shiao

A method of forming a semiconductor device by recessing the upper surface of a semiconductor substrate in first and second areas but not a third area, forming a first conductive layer in the first and second areas, forming a second conductive layer in all three areas, removing the first and second conductive layers from the second area and portions thereof from the first area resulting in pairs of stack structures each with a control gate over a floating gate, forming a third conductive layer in the first and second areas, forming a protective layer in the first and second areas and then removing the second conductive layer from the third area, then forming blocks of conductive material in the third area, then etching in the first and second areas to form select and HV gates, and replacing the blocks of conductive material with blocks of metal material.

Method of making memory cells, high voltage devices and logic devices on a substrate

A method of forming a semiconductor device includes recessing the upper surface of first and second areas of a semiconductor substrate relative to the third area of the substrate, forming a pair of stack structures in the first area each having a control gate over a floating gate, forming a first source region in the substrate between the pair of stack structures, forming an erase gate over the first source region, forming a block of dummy material in the third area, forming select gates adjacent the stack structures, forming high voltage gates in the second area, forming a first blocking layer over at least a portion of one of the high voltage gates, forming silicide on a top surface of the high voltage gates which are not underneath the first blocking layer, and replacing the block of dummy material with a block of metal material.

Method of making memory cells, high voltage devices and logic devices on a substrate with silicide on conductive blocks

The present invention discloses a polishing slurry, wherein said polishing slurry comprises a carrier and functionalized alumina grains. The polishing slurry, which comprises functionalized alumina grains having desirable dispersibility, has desirable stability and is able to lower the defect rate of the substrate surface, improve the surface quality, decrease the total metal loss and enlarge the variation range of the technical parameters.

Polishing slurry

This invention disclosed a chemical mechanical polishing slurry, which includes at least one abrasive particle, an oxidant and a carrier. The oxidant is combined with a big metallorganic compound; and the applications and corresponding handling method are also disclosed. This invention slurry can realize high removal rate, no corrosion, low defectivity and high plan.

Chemical mechanical polishing slurries, their applications and method of use thereof

Systems and methods are disclosed for polishing a semiconductor substrate having a polymer film surface deposited thereon by chemishearing the surface; and performing chemical mechanical polishing (CMP) on the chemisheared surface.

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Shanghai, China

Andy Yang