Silicon Storage Technology, Inc.

Dell Products Inc.

Andy Qiang Liu

Nhan Do

Xian Liu

Chunming Wang

Leo Xing

Melvin Diao

Jason Pritchard

Lynn Lingyu Kong

James E Roche

Jeremy Qiu

Chambers Yin

Melvin Dao

A system for data communications, comprising an upstream component configured to select an in-band peripheral component interconnect express (PCIe) equalization procedure or an out-of-band PCIe equalization procedure and a downstream component configured to respond to the selected one of the in-band PCIe equalization procedure or the out-of-band PCIe equalization procedure to enable PCIe communications with the upstream component.

Adaptive transmitter preset mechanism in PCIe link equalization procedure

High bay light

A pair of memory cells that includes first and second spaced apart trenches formed into the upper surface of a semiconductor substrate, and first and second floating gates disposed in the first and second trenches. First and second word line gates disposed over and insulated from a portion of the upper surface that is adjacent to the first and second floating gates respectively. A source region is formed in the substrate laterally between the first and second floating gates. First and second channel regions extend from the source region, under the first and second trenches respectively, along side walls of the first and second trenches respectively, and along portions of the upper surface disposed under the first and second word line gates respectively. The first and second trenches only contain the first and second floating gates and insulation material respectively.

Non-volatile memory cells with floating gates in dedicated trenches

A method of forming a non-volatile memory cell on a substrate having memory cell and logic circuit regions by forming a pair of conductive floating gates in the memory cell region, forming a first source region in the substrate between the pair of floating gates, forming a polysilicon layer in both regions, forming an oxide layer over the polysilicon layer in the logic circuit region, performing a chemical-mechanical polish of the polysilicon layer in the memory cell area leaving a first block of the polysilicon layer between the floating gates that is separated from remaining portions of the polysilicon layer, and selectively etching portions of the polysilicon layer to result in: second and third blocks of the polysilicon layer disposed in outer regions of the memory cell area, and a fourth block of the polysilicon layer in the logic circuit region.

Method of making split gate non-volatile flash memory cell

A twin bit memory cell includes first and second spaced apart floating gates formed in first and second trenches in the upper surface of a semiconductor substrate. An erase gate, or a pair of erase gates, are disposed over and insulated from the floating gates, respectively. A word line gate is disposed over and insulated from a portion of the upper surface that is between the first and second trenches. A first source region is formed in the substrate under the first trench, and a second source region formed in the substrate under the second trench. A continuous channel region of the substrate extends from the first source region, along a side wall of the first trench, along the portion of the upper surface that is between the first and second trenches, along a side wall of the second trench, and to the second source region.

Twin bit non-volatile memory cells with floating gates in substrate trenches

Growing community of inventors

Shanghai, China

Andy Qiang Liu