Taiwan Semiconductor Manufacturing Comp. Ltd.

Andy Li

Ming-Han Lee

Shin-Yi Yang

Chao-Hsien Peng

Ching-Fu Yeh

Yu-Chen Chan

Meng-Pei Lu

Guanyu Luo

A semiconductor device includes an interconnect structure embedded in a first metallization layer comprising a dielectric material. The interconnect structure includes a first metal material. The semiconductor device includes a first liner structure embedded in the first metallization layer. The first liner structure is extended along one or more boundaries of the interconnect structure in the first metallization layer. The first liner structure includes a second metal material reacted with one or more dopants, the second metal material being different from the first metal material.

Semiconductor device including liner structure

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Hsinchu, Taiwan

Andy Li