Kla Tencor Corporation

Andy Hill

Karel Van Gils

Guoheng Zhao

Sheng Liu

Johan De Greeve

Maarten Van Der Burgt

Amnon Manassen

Vladimir Levinski

Daniel Kandel

Noam Sapiens

Daria Negri

Ohad Bachar

Scott Allen Young

Joel L Seligson

Benoit Maison

Christophe Wouters

Moshe Baruch

Ofer Zaharan

Laurent Hermans

Frans Nijs

For three-dimensional topography measurement of a surface of an object patterned illumination is projected on the surface through an objective. A relative movement between the object and the objective is carried out, and plural images of the surface are recorded through the objective by a detector. The direction of the relative movement includes an oblique angle with an optical axis of the objective. Height information for a given position on the surface is derived from a variation of the intensity recorded from the respective position. Also, patterned illumination and uniform illumination may be projected alternatingly on the surface, while images of the surface are recorded during a relative movement of the object and the objective along an optical axis of the objective. Uniform illumination is used for obtaining height information for specular structures on the surface, patterned illumination is used for obtaining height information on other parts of the surface.

Method and system for optical three dimensional topography measurement

The disclosure is directed to providing high resolution stereoscopy with extended depth of focus. Wave front coding in optical paths going to a first detector and at least a second detector may be implemented to affect an intermediate set of images. The intermediate set of images may be filtered (i.e. decoded) to produce a filtered set of images with selected resolution and depth of focus properties. A first filtered image and a second filtered image may be substantially simultaneously presented to respective first and second eyes of an observer to further generate an illusion of enhanced depth (i.e. 3D perception).

Stereo extended depth of focus

An apparatus () and a method for the three dimensional inspection of saw marks () on at least one surface () of a wafer () are disclosed. At least one camera () is required to capture an image of the entire surface () of the wafer (). At least one line projector () provides a light bundle (), centered about a central beam axis (). The line projector () is arranged such that the central beam axis () is at an acute angle (&#x3b1;) with regard to the plane (P) of the wafer (). A line shifter () is positioned in the light bundle () between each line projector () and the surface () of the wafer (). A frame grabber () and an image processor () are used to synchronize and coordinate the image capture and the position of the pattern () of lines () on the front side (F) and/or the back side (B) of the wafer ().

Apparatus and method for three dimensional inspection of wafer saw marks

A ring light illuminator with annularly arranged light sources is disclosed. To each light source there corresponds a beam shaper comprising a light collector, a homogenizing means for light from the light source, and an imaging means for imaging an output of the homogenizing means into an area to be illuminated. The homogenizing means in embodiments is a rod, into which light from the light collector is directed. The end of the rod opposite the light collector is imaged by the imaging means into the area to be illuminated.

Ring light illuminator and beam shaper for ring light illuminator

The present invention may include measuring a first phase distribution across a pupil plane of a portion of illumination reflected from a first overlay target of a semiconductor wafer, wherein the first overlay target is fabricated to have a first intentional overlay, measuring a second phase distribution across the pupil plane of a portion of illumination reflected from a second overlay target, wherein the second overlay target is fabricated to have a second intentional overlay in a direction opposite to and having the same magnitude as the first intentional overlay, determining a first phase tilt associated with a sum of the first and second phase distributions, determining a second phase tilt associated with a difference between the first and second phase distributions, calibrating a set of phase tilt data, and determining a test overlay value associated with the first and second overlay target.

Overlay metrology by pupil phase analysis

Growing community of inventors

San Jose, CA, United States of America

Andy Hill