Globalfoundries Inc.

Andy Chi-Hung Wei

Guillaume Bouche

Jason Eugene Stephens

Tuhin Guha Neogi

Sudharshanan Raghunathan

Jongwook Kye

Lei Yuan

Jia Zeng

Irene Yuh-Ling Lin

Vikrant Kumar Chauhan

David Michael Permana

At least one method, apparatus and system disclosed herein for forming a finFET device having a pass-through structure. A first gate structure and a second gate structure are formed on a semiconductor wafer. A first active area is formed on one end of the first and second gate structures. A second active area is formed on the other end of the first and second gate structures. A trench silicide (TS) structure self-aligned to the first and second gate structures is formed. The TS structure is configured to operatively couple the first active area to the second active area.

Methods, apparatus and system for a passthrough-based architecture

At least one method, apparatus and system disclosed herein for forming a finFET device. A gate structure comprising a gate spacer on a semiconductor wafer is formed. A self-aligned contact (SAC) cap is formed over the gate structure. A TS structure is formed. At least one Mmetal structure void is formed. At least one CB structure void adjacent the Mmetal structure void is formed. An etch process is performed the Mand CB structures voids to the gate structure. At least one CA structure void adjacent the CB structure void is formed. The M, CB, and CA structure voids are metallized.

Method, apparatus and system for a high density middle of line flow

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Queensbury, NY, United States of America

Andy Chi-Hung Wei