Kromek Limited

Andy Brinkman

Max Robinson

Arnab Basu

Ben Cantwell

Benjamin John Cantwell

Max 1 Bishop's Court Low Road Robinson

Ben 152 Highfield Rise Cantwell

A structure including a substrate, an intermediate layer provided and formed directly onto the substrate, a transition region, and a group II-VI bulk crystal material provided and formed as an extension of the transition region. The transition region acts to change the structure from the underlying substrate to that of the bulk crystal. In a method of manufacture, a similar technique can be used for growing the transition region and the bulk crystal layer.

Semiconductor device and method of manufacture thereof

Device and method of forming a device in which a substrate () is fabricated with at least part of an electronic circuit for processing signals. A bulk single crystal material () is formed on the substrate, either directly on the substrate () or with an intervening thin film layer or transition region (). A particular application of the device is for a radiation detector.

Semiconductor device with a bulk single crystal on a substrate

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Durham, United Kingdom

Andy Brinkman