Macom Technology Solutions Holdings, Inc.

Andrzej Rozbicki

Timothy Edward Boles

Cristiano Bazzani

Christopher Dirk Weigand

James Joseph Brogle

David Hoag

Chi Mo

Paul E Hogan

Belinda Simone Edmee Piernas

Gary Pepelis

Scott Donahue

Aspects of coaxial to microstrip transitional housings are described. In one example, a transitional housing includes a channel comprising sidewalls formed into the housing, and an opening formed at an end of the channel. The transitional housing also includes a plug that is fitted into the opening at an end of the channel. The plug has a flat surface positioned at the end of the channel, extending between the sidewalls of the channel, and an undercut below the flat surface. The transitional housing also includes a coaxial conductor aperture that extends from outside the housing, into the housing, into the plug, through the flat surface and undercut of the plug, and into the channel. Use of the plug offers a manufacturing solution for the mechanical and electrical transition between a coaxial feedthrough to a PCB microstrip secured within the housing. The solution helps to eliminate unwanted mismatches of the transition.

Coaxial to microstrip transitional housing

A diode semiconductor structure is described. In one example, a diode device includes a substrate, a layer of first semiconductor material of a first doping type, a layer of intrinsic semiconductor material, and a layer of second semiconductor material of a second doping type. The diode device also includes a metal contact formed on the layer of first semiconductor material and a metal via formed from a backside of the substrate, through the substrate, and through the layer of first semiconductor material, where the metal via contacts a bottom surface of the metal contact on the layer of first semiconductor material. In this configuration, a direct electrical connection can be achieved between the backside of the substrate and the metal contact on the layer of first semiconductor material without the need for an additional metal connection, such as a metal air bridge, to the metal contact.

Unibody lateral via

In one example, a device having integrated package interference isolation includes a ground pad, an integrated circuit device die secured to the ground pad, a substrate secured to the ground pad, at least one a high-frequency, high-power semiconductor device secured to a top mounting surface of the substrate. For electromagnetic isolation, the integrated circuit device die includes a top metal, and the substrate includes a metal via electrically coupled to a metal trace that extends on the top mounting surface of the substrate. The device package also includes a number of ground pad bonding wires that electrically couple the redistribution layer of the integrated circuit device die and the metal trace to the ground pad. The redistribution layer of the integrated circuit device die and the metal trace and via of the substrate help to shield electromagnetic radiation between components in the device package.

Intra-package interference isolation

An apparatus having a plurality of insulating layers, a plurality of conductive layers and a plating is disclosed. The conductive layers may be separated by the insulating layers. A first pattern in a first of the conductive layers generally extends to an edge castellation. A second pattern in a second of the conductive layers may also extends to the edge castellation. The plating may be disposed in the edge castellation and connect the first pattern to the second pattern. The plating in the castellation may extend at most between a subset of the conductive layers.

Blind via edge castellation

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Santa Clara, CA, United States of America

Andrzej Rozbicki