Ihp Gmbh-Innovations for High Performance Microelectronics/institut Fur Innovative Mikroelektronik

Andriy Goryachko

Hans-Jörg Osten

Rainer Kurps

Elena Krüger, Legal Representative

Jing Ping Liu

The invention relates to a method for the selective silicidation of contact areas that allow the production of highly integrated circuits, preferably in a SMOS or BiCMOS process. To this end, a metal oxide layer () that contains for example praseodymium oxide is deposited onto a prepared wafer (). A silicon layer () and on top of said silicon layer a cover layer () is deposited onto the metal oxide layer (), said cover layer being laterally structured. In a subsequent tempering step in an oxygen-free, reducing gas atmosphere the silicon layer () and the metal oxide layer () are converted to a metal silicide layer in lateral sections () in which the cover layer () was previously removed.

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Frankfurt-am-Main, Germany

Andriy Goryachko