Pv Silicon Forschungs Und Produktions Gmbh

Siltronic Ag

Andris Muiznieks

Ludwig Altmannshofer

Helge Riemann

Nikolai V Abrosimov

Anke Luedge

Nikolai Abrosimov

Anke Lüdge

A method of making a single-crystalline Si wafer with an approximately polygonal cross section and having a material property that is the same as a zone-pulled Si crystal, and the single-crystalline Si wafer. The method includes pulling at least one bottle neck of a crystal vertically downwards from a rotating hanging melt drop. The rotational speed of the crystal is reduced to between 0 and less than 1 rpm. In a crystal-growth phase, a Si single crystal ingot is pulled vertically downwards with an approximately polygonal cross section. An inductor is used to generate a temperature profile at a growth phase boundary of the crystal that corresponds to the shape of a cross section of the pulled Si single crystal ingot. The growth is ended at a desired pulling length and the Si single crystal ingot is cut into wafers having an approximately polygonal cross section.

Method for producing a monocrystalline Si wafer having an approximately polygonal cross-section and corresponding monocrystalline Si wafer

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Riga, Latvia

Andris Muiznieks