Carl Zeiss Smt Gmbh

Carl-zeiss-stiftung

Carl-zeiss-smt Ag

Carl Zeiss Gmbh

Andrey E Yakshin

Frederik Bijkerk

Eric Louis

Wolfgang Fukarek

Sebastian Oestreich

Hartmut Enkisch

Jan Willem Verhoeven

Marco Wedowski

Roman Klein

Viacheslav Medvedev

Ileana Nedelcu

Frank Stietz

Robbert W E Van De Kruijs

Fred Bijkerk

Peter Cornelis Görts

Lambertus Gerhardus Albertus Michael Alink

Robbert Wilhelmus Elisabeth Van De Kruijs

Peter Cornelis G&ouml;rts

Dmitry Kuznetsov

For a working wavelength in the range from 1 nm to 12 nm, a reflective optical element has, on a substrate, a multilayer system that includes at least two alternating materials having a different real part of the refractive index at the working wavelength. The multilayer system includes a first alternating material from the group formed from thorium, uranium, barium, nitrides thereof, carbides thereof, borides thereof, lanthanum carbide, lanthanum nitride, lanthanum boride, and a second alternating material from the group formed from carbon, boron, boron carbide, or lanthanum as first alternating material and carbon or boron as second alternating material. It has, on the side of the multilayer system remote from the substrate, a protective layer system including a nitride, an oxide and/or a platinum metal.

Reflective optical element

Deposition processes and devices for the fabrication of multilayer systems to better control the energy contribution at different stages of the deposition. This is achieved by depositing films by sputtering in a scheme providing for thermalized particles. Thermalized particles are obtained by choosing the working gas pressure and the distance between target and substrate to result in a mean free path of particles smaller than the distance between target and substrate or to result in a product of pressure and distance being larger than 2.0 cmPa.

Processes and device for the deposition of films on substrates

A reflective optical element exhibits an increase in the maximum reflectivity at operating wavelengths in the extreme ultraviolet or soft x-ray wavelength range. A first additional intermediate layer () and a second additional intermediate layer () are provided between the absorber layer () and the spacer layer (), wherein the first additional intermediate layer increases the reflectivity and the second additional intermediate layer () prevents chemical interaction between the first additional intermediate layer () and the adjoining spacer layer () and/or the absorber layer ().

Reflective optical element for EUV lithography device

It is in the object of the present invention to improve current deposition processes and devices for the fabrication of multilayer systems to better control the energy contribution at different stages of the deposition. This is achieved by depositing films by sputtering in a scheme providing for thermalized particles. One can get thermalized particles by choosing the working gas pressure and the distance between target and substrate to result in a mean free path of particles smaller than the distance between target and substrate or to result in a product of pressure and distance being larger than 2.0 cmPa.

A multilayer system and its production. Multilayer systems, such as those used as mirrors in the extreme ultraviolet wavelength range, suffer contamination or oxidation during storage in air and in long-time operation, i.e. when exposed to EUV radiation in a vacuum environment with certain partial pressures of water or oxygen, which causes a serious reduction in reflectivity. The multilayer system according to the invention will have a long life with constantly high reflectivity. Their reflectivity can be enhanced by barrier layers. The multilayer systems according to the invention have protective layers comprising iridium. The multilayer systems according to the invention are produced by direct, ion-beam-supported growth of the respective layer. The multilayer systems according to the invention are not only resistant to contamination and oxidation, but can also be cleaned if necessary, without losing reflectivity. Because of their long life with constantly high reflectivity, they are particularly suitable for use in semiconductor lithography in the soft X-ray range or extreme ultraviolet wavelength range.

Multilayer system with protecting layer system and production method

In order to reduce contamination of optical elements which comprise a multilayer system on a substrate, it is proposed that the layer material and/or the layer thickness of at least one layer of the multilayer system are/is selected such that the standing wave which forms during reflection of the irradiated operating wavelength, forms a node of the electrical field intensity (node condition) in the area of the free interface of the multilayer system. Furthermore, a method for determining a design of a multilayer system, as well as a manufacturing process and a lithography apparatus are described.

Optical element and method for its manufacture as well as lithography apparatus and method for manufacturing a semiconductor device

Multilayer systems, such as those used as mirrors in the extreme ultraviolet wavelength range, suffer contamination or oxidation during storage in air and in long-time operation, i.e. when exposed to EUV radiation in a vacuum environment with certain partial pressures of water or oxygen, which causes a serious reduction in reflectivity. The multilayer system according to the invention will have a long life with constantly high reflectivity. The multilayer systems according to the invention have protective layers made from ruthenium, aluminium oxide, silicon carbide, molybdenum carbide, carbon, titanium nitride or titanium dioxide. The multilayer systems according to the invention are produced by direct, ion-beam-supported growth of the protective layer or, except in the case of ruthenium, by mixing aluminium or titanium with oxygen or nitrogen at atomic level, with ion-beam support, to product an outermost protective layer with ion-beam support. The multilayer systems according to the invention are not only resistant to contamination and oxidation, but can also be cleaned if necessary, without losing reflectivity. Because of their long life with constantly high reflectivity, they are particularly suitable for use in semiconductor lithography in the soft X-ray range or extreme ultraviolet wavelength range.

Method for the production of multi-layer systems

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Nieuwegein, Netherlands

Andrey E Yakshin