Technologies and Devices International, Inc.

Technology and Devices International, Inc.

Andrey E Nikolaev

Vladimir A Dmitriev

Denis V Tsvetkov

Yuri V Melnik

Konstantin V Vassilevski

A method and apparatus for fabricating thin Group III nitride layers as well as Group III nitride layers that exhibit sharp layer-to-layer interfaces are provided. According to one aspect, an HVPE reactor includes one or more gas inlet tubes adjacent to the growth zone, thus allowing fine control of the delivery of reactive gases to the substrate surface. According to another aspect, an HVPE reactor includes both a growth zone and a growth interruption zone. According to another aspect, an HVPE reactor includes a slow growth rate gallium source, thus allowing thin layers to be grown. Using the slow growth rate gallium source in conjunction with a conventional gallium source allows a device structure to be fabricated during a single furnace run that includes both thick layers (i.e., utilizing the conventional gallium source) and thin layers (i.e., utilizing the slow growth rate gallium source).

Apparatus for epitaxially growing semiconductor device structures with sharp layer interfaces utilizing HVPE

Apparatus for epitaxially growing semiconductor device structures with submicron group III nitride layer utilizing HVPE

Method of epitaxially growing device structures with submicron group III nitride layers utilizing HVPE

Method of epitaxially growing submicron group III nitride layers utilizing HVPE

Method of epitaxially growing device structures with sharp layer interfaces utilizing HVPE

A process is disclosed for producing pn junctions and p-i-n junctions from group III nitride compound semiconductor materials. The process comprises growing of pn junctions and p-i-n junctions by hydride vapor phase epitaxy employing hydride of nitrogen (ammonia, hydrozine) as a source of nitrogen and halides of group III metal as a source of metal. Mg is used as acceptor impurity to form p-type III-V nitride layers. The preferred sources for Ga and Al are Ga and Al metals, respectively. The process is carried out in the temperature range from 900 to 1200&deg; C.

Process for producing III-V nitride pn junctions and p-i-n junctions

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St. Petersburg, Russia

Andrey E Nikolaev