Asml Netherlands B.v.

Asml Holding N.v.

Andrey Alexandrovich Nikipelov

Vadim Yevgenyevich Banine

Erik Roelof Loopstra

Wouter Joep Engelen

Marcus Adrianus Van De Kerkhof

Olav Waldemar Vladimir Frijns

Pieter Willem Herman De Jager

Maxim Aleksandrovich Nasalevich

Pieter-Jan Van Zwol

David Ferdinand Vles

Willem Joan Van Der Zande

Johannes Antonius Gerardus Akkermans

Leonardus Adrianus Gerardus Grimminck

Mária Péter

Gosse Charles De Vries

Johannes Petrus Martinus Bernardus Vermeulen

Andrei Mikhailovich Yakunin

Han-Kwang Nienhuys

Paul Janssen

Arnoud Willem Notenboom

Egbert Lenderink

Derk Servatius Gertruda Brouns

Matthias Kruizinga

Willem-Pieter Voorthuijzen

Teis Johan Coenen

Alexey Olegovich Polyakov

Aleksandar Nikolov Zdravkov

Gijsbert Rispens

Erik Achilles Abegg

Nadja Schuh

Michiel Alexander Blauw

Nirupam Banerjee

Antonius Willem Verburg

Nicolae Maxim

Claudia Piliego

Andelko Katalenic

Petrus Rutgerus Bartraij

Johannes Hubertus Josephina Moors

Michael Jozef Mathijs Renkens

Borgert Kruizinga

Arjen Boogaard

Gerrit Jacobus Hendrik Brussaard

Maarten Van Kampen

Edwin Te Sligte

Otger Jan Luiten

Alexey Sergeevich Kuznetsov

Johan Franciscus Maria Beckers

Rilpho Ludovicus Donker

Joost André Klugkist

Roland Johannes Wilhelmus Stas

Sjoerd Nicolaas Lambertus Donders

Nicolaas Ten Kate

Johannes Henricus Wilhelmus Jacobs

Antonius Theodorus Anna Maria Derksen

Franciscus Johannes Joseph Janssen

Jan Bernard Plechelmus Van Schoot

Jacobus Johannus Leonardus Hendricus Verspay

Richard Joseph Bruls

Ramon Pascal Van Gorkom

Patrick Sebastian Uebel

Antonius Franciscus Johannes De Groot

Sebastian Thomas Bauerschmidt

Jozef Petrus Henricus Benschop

Adrianus Hendrik Koevoets

Laurentius Cornelius De Winter

Yang-Shan Huang

Albertus Victor Gerardus Mangnus

Peter Maximilian Götz

Robert Gabriël Maria Lansbergen

Alexander Matthijs Struycken

Sanjaysingh Lalbahadoersing

Luigi Scaccabarozzi

Erwin Paul Smakman

Wilhelmus Patrick Elisabeth Maria Op 't Root

Jeroen Huijbregtse

Johannes Adrianus Cornelis Maria Pijnenburg

Jacobus Cornelis Gerardus Van Der Sanden

Reinier Theodorus Martinus Jilisen

Brennan Peterson

Manish Ranjan

Natallia Eduardauna Uzunbajakava

Zhuangxiong Huang

Ties Wouter Van Der Woord

Ronald Peter Albright

Jeroen Van Duivenbode

Satish Achanta

Alain Louis Claude Leroux

Amir Abdolvand

Kornelis Frits Feenstra

Stef Marten Johan Janssens

Nicolaas Antonius Allegondus Johannes Van Asten

Bert Pieter Van Drieënhuizen

Wilhelmus Jacobus Johannes Welters

Niek Antonius Jacobus Maria Kleemans

Kursat Bal

Edgar Alberto Osorio Oliveros

Christian Gerardus Norbertus Hendricus Marie Cloin

Florian Didier Albin Dhalluin

Arjen Teake De Jong

Parham Yaghoobi

Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.

Membrane for EUV lithography

An apparatus comprising: a radiation receiving apparatus provided with an opening operable to receive radiation from a radiation source through the opening; wherein the radiation receiving apparatus comprises a deflection apparatus arranged to change a trajectory of a particle through the opening arriving at the radiation receiving apparatus.

Lithographic system provided with a deflection apparatus for changing a trajectory of particulate debris

An inspection system that include a selective deposition tool configured to receive a sample and selectively deposit a material onto the sample, an inspection tool configured to perform an inspection process on the sample provided with the deposited material, and an enclosure configured to enclose the selective deposition tool and the inspection tool.

Inspection system, lithographic apparatus, and inspection method

A first diffusor configured to receive and transmit radiation has a plurality of layers, each layer arranged to change an angular distribution of EUV radiation passing through it differently. A second diffusor configured to receive and transmit radiation has a first layer and a second layer. The first layer is formed from a first material, the first layer including a nanostructure on at least one surface of the first layer. The second layer is formed from a second material adjacent to the at least one surface of the first layer such that the second layer also includes a nanostructure. The second material has a refractive index that is different to a refractive index of the first layer. The diffusors may be configured to receive and transmit EUV radiation.

Transmissive diffusor

A lithographic apparatus comprising: a clamping surface for supporting a substrate, wherein a property of the clamping surface is defined by at least one clamping surface parameter, and wherein the property of the clamping surface has been selected to exhibit low wear; a clamping apparatus for actuating a clamping operation between the clamping surface and the substrate, wherein the clamping operation is defined at least in part by at least one interface characteristic between the clamping surface and the substrate; and a processing station, operable to apply an adjustment to a first property of the substrate to optimize at least one interface characteristic of a particular clamping operation in dependence on the clamping surface parameter and at least one substrate surface parameter which defines a second property of the substrate.

Lithographic apparatus

A method and apparatus for cleaning vacuum ultraviolet (VUV) optics (e.g., one or more mirrors of a VUV) of a substrate inspection system is disclosed. The cleaning system ionizes or disassociates hydrogen gas in a VUV optics environment to generate hydrogen radicals (e.g., H*) or ions (e.g., H, H, H, which remove water or hydrocarbons from the surface of the one or more mirrors. The one or more VUV mirrors may include a reflective material, such as aluminum. The one or more VUV mirrors may have a protective coating to protect the reflective material from any detrimental reaction to the hydrogen radicals or ions. The protective coating may include a noble metal.

Apparatus and method for cleaning an inspection system

A method for providing a wear-resistant material on a body. A composite body that may be obtained by the method. The composite body may be a substrate holder or a reticle clamp for use in a lithographic apparatus. The method includes providing a body made of glass, ceramic or glass-ceramic; providing a wear-resistant material having a hardness of more than 20 GPa; and brazing or laser welding the wear-resistant material to the body.

Method for providing a wear-resistant material on a body, and composite body

A membrane cleaning apparatus for removing particles from a membrane, the apparatus including a membrane support and an electric field generating mechanism. The membrane support is for supporting the membrane. The electric field generating mechanism is for generating an electric field in the vicinity of the membrane when supported by the membrane support. The electric field generating mechanism may include: one or more collector electrodes; and a mechanism for applying a voltage across a membrane supported by the membrane support and the or each of the one or more collector electrodes.

Membrane cleaning apparatus

An object, such as a sensor for an immersion lithographic apparatus, has an outer layer which comes in contact with immersion liquid and wherein the outer layer has a composition including a rare earth element. There is also provided an immersion lithographic apparatus having such an object and a method for manufacturing such an object.

Object in a lithographic apparatus

A lithographic apparatus comprising a projection system configured to project a patterned radiation beam to form an exposure area on a substrate, a cooling apparatus located in use above the substrate adjacent to the exposure area, the cooling apparatus being configured to remove heat from the substrate during use, a plasma vessel located below the cooling apparatus with its opening facing towards the cooling apparatus, and a gas supply for supplying gas to the plasma vessel and an aperture for receipt of a radiation beam. In use, supplied gas and a received radiation beam react to form a plasma within the plasma vessel that is directed towards a surface of the cooling apparatus which faces the opening of the plasma vessel.

Cooling apparatus and plasma-cleaning station for cooling apparatus

A system and method for providing a radiation source is disclosed. In one arrangement, the radiation source includes a gas cell having a window, an optical fiber that is hollow and has an axial direction, an end thereof being enclosed within the gas cell and optically coupled to the window via an optical path, and a surface, disposed around the end of the optical fiber, and extending past the end of the optical fiber in the axial direction towards the window so as to limit one or more selected from: the exchange of gas between the optical path and the remainder of the gas cell, ingress of plasma towards or into the optical fiber, and/or radical flux towards etch-susceptible surfaces.

End facet protection for a radiation source and a method for use in metrology applications

A radioisotope production apparatus (RI) comprising an electron source arranged to provide an electron beam (E). The electron source comprises an electron injector () and an electron accelerator (). The radioisotope production apparatus (RI) further comprises a target support structure configured to hold a target () and a beam splitter () arranged to direct the a first portion of the electron beam along a first path towards a first side of the target () and to direct a second portion of the electron beam along a second path towards a second side of the target ().

Radioisotope production

A lithographic apparatus has an object, the object includes: a substrate and optionally a lower layer on the substrate; an upper layer; and an intermediate layer between the upper layer and the substrate, wherein a bond strength between the intermediate layer and the substrate or lower layer is greater than a bond strength between the intermediate layer and the upper layer and the intermediate layer has a Young's Modulus and/or a Poisson ratio within 20% of that of the upper layer.

Lithographic apparatus comprising an object with an upper layer having improved resistance to peeling off

A component for use in a patterning device environment including a patterning device, wherein the component is treated to suppress EUV plasma-induced contaminant release and/or atomic hydrogen or other radicals induced defectivity. A conduit array comprising at least one conduit, wherein the at least one conduit has been treated to promote adhesion of a contaminant to the at least one conduit.

Component for use in a patterning device environment

Growing community of inventors

Veldhoven, Netherlands

Andrey Alexandrovich Nikipelov