Kla Tencor Corporation

Kla Corporation

Kla-tencor Technologies Corporation

Andrew Zeng

Wayne Chen

Mustafa Akbulut

Mehdi Vaez-Iravani

Robert W Fiordalice

Shouhong Tang

Jeffrey Alan Rzepiela

Helen Heng Liu

Carl Treadwell

Yi Zhang

Jaydeep K Sinha

Haiguang Chen

Chunsheng J Huang

Sergey Kamensky

Chunhai Wang

Dengpeng Chen

Frederick Arnold Goodman

Steve Xu

Xuan Wang

John Hager

An inspection system may include a controller coupled to a differential interference contrast imaging tool for generating images of a sample based on illumination with two sheared illumination beams. The controller may determine a first defect-induced phase shift based on a first set of images of a defect on the sample with a first selected illumination spectrum and two or more selected induced phase differences between the two sheared illumination beams, determine a second defect-induced phase shift based a second set of images of the defect with a second selected illumination spectrum and two or more selected induced phase differences between the two sheared illumination beams, and classify the defect as a metal or a non-metal based on a comparison of the first phase shift to the second phase shift.

Multi-wavelength interferometry for defect classification

The inspection system includes an illumination source, a TDI-CCD sensor, and a dark field/bright field sensor. A polarizer receives the light from the light source. The light from the polarizer is directed at a Wollaston prism, such as through a half wave plate. Use of the TDI-CCD sensor and the dark field/bright field sensor provide high spatial resolution, high defect detection sensitivity and signal-to-noise ratio, and fast inspection speed.

Scanning differential interference contrast in an imaging system design

A system includes one or more wafer geometry measurement tools configured to obtain geometry measurements from a wafer. The system also includes one or more processors in communication with the one or more wafer geometry measurement tools. The one or more processors are configured to apply a correction model to correct the geometry measurements obtained by the one or more wafer geometry measurement tools. The correction model is configured to correct measurement errors caused by a transparent film positioned on the wafer.

Transparent film error correction pattern in wafer geometry system

The system includes a dual interferometer sub-system configured to measure flatness across a substrate. The system includes a mass sensor configured to measure the mass of the substrate. The system includes a controller communicatively coupled to the dual interferometer sub-system and the mass sensor. The controller includes one or more processors. The one or more processors are configured to execute a set of program instructions stored in memory, the set of program instructions configured to cause the one or more processors to determine a thickness distribution of at least one of the substrate or a film deposited on the substrate as a function of position across the substrate based on one or more flatness measurements from the dual interferometer sub-system and one or more mass measurements from the mass sensor.

System and method for measuring substrate and film thickness distribution

A semiconductor measuring tool has a folding mirror configuration that directs a light beam to pass the same space multiple times to reduce the size and footprint. Furthermore, the folding mirrors may reflect the light beam at less than forty-five degrees; thereby allowing for smaller folding mirrors as compared to the prior art.

Method and apparatus to fold optics in tools for measuring shape and/or thickness of a large and thin substrate

A method for enabling more accurate measurements of localized features on wafers is disclosed. The method includes: a) performing high order surface fitting to more effectively remove the low frequency shape components and also to reduce possible signal attenuations commonly observed from SEMI standard high pass, such as Gaussian and Double Gaussian filtering; b) constructing and applying a proper two dimensional LFM window to the residual image from the surface fitting processing stage to effectively reduce the residual artifacts at the region boundaries; c) calculating the metrics of the region using the artifact-reduced image to obtain more accurate and reliable measurements; and d) using site-based metrics obtained from front and back surface data to quantify the features of interest. Additional steps may also include: filtering data from measurements of localized features on wafers and adjusting the filtering behavior according to the statistics of extreme data samples.

Methods and systems for improved localized feature quantification in surface metrology tools

Two or more defect maps may be provided for the same sample surface at different detection sensitivities and/or processing thresholds. The defect maps may then be compared for better characterization of the anomalies as scratches, area anomalies or point anomalies. This can be done without concealing the more significant and larger size defects amongst numerous small and immaterial defects. One or more defect maps can be used to report the anomalies with classified information; the results from this map(s) can be used to monitor the process conditions to obtain better yield.

System and methods for classifying anomalies of sample surfaces

Scattered radiation from a sample surface is collected by means of a collector that collects radiation substantially symmetrically about a line normal to the surface. The collected radiation is directed to channels at different azimuthal angles so that information related to relative azimuthal positions of the collected scattered radiation about the line is preserved. The collected radiation is converted into respective signals representative of radiation scattered at different azimuthal angles about the line. The presence and/or characteristics of anomalies are determined from the signals. Alternatively, the radiation collected by the collector may be filtered by means of a spatial filter having an annular gap of an angle related to the angular separation of expected pattern scattering. Signals obtained from the narrow and wide collection channels may be compared to distinguish between micro-scratches and particles. Forward scattered radiation may be collected from other radiation and compared to distinguish between micro-scratches and particles. Intensity of scattering is measured when the surface is illuminated sequentially by S- and P-polarized radiation and compared to distinguish between micro-scratches and particles. Representative films may be measured using profilometers or scanning probe microscopes to determine their roughness and by the above-described instruments to determine haze in order to build a database. Surface roughness of unknown films may then be determined by measuring haze values and from the database.

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Fremont, CA, United States of America

Andrew Zeng