Applied Materials, Inc.

Micrel, Incorporated

Andrew V Le

Lin Zhang

Xuesong Lu

Jang Seok Oh

Shawyon Jafari

Ralph Peter Antonio

Patrick L Smith

Fa Ji

Muhammad M Rasheed

Michael Santiago Cox

Xinhai Han

Jian J Chen

Shuran Sheng

Rongping Wang

Miles Dudman

Charles S Kunze

An FI having an in-situ particle detector and a method for particle detection therein are provided. In one aspect, the FI includes a fan, a substrate support, a particle detector, and an exhaust outlet. The fan, substrate support, and particle detector are arranged such that, in operation, the fan directs air towards the exhaust outlet and over a substrate on the substrate support to create laminar flow. The particle detector, positioned downstream from the substrate support and upstream from the exhaust outlet, analyzes the air and detects particle concentration before the particles are exhausted. The collected particle detection data may be combined with data from other sensors in the FI and used to identify the source of particle contamination. The particle detector may also be incorporated into other system components, including but not limited to, a load-lock or buffer chamber to detect particle concentration therein.

Advanced in-situ particle detection system for semiconductor substrate processing systems

Embodiments described herein relate to apparatus and coating methods to reduce chamber arcing, for example, in HDP-CVD, PECVD, PE-ALD and Etch chambers. The apparatus include a ring shaped gas distributor used for in-situ deposition of coating materials, and a process chamber including the same. The ring shaped gas distributor includes a ring shaped body having at least one gas entrance port disposed on a first side thereof and a plurality of gas distribution ports disposed on a first surface of the ring shaped body. The plurality of gas distribution ports are arranged in a plurality of evenly distributed rows. The plurality of gas distribution ports in a first row of the plurality of evenly distributed rows is adapted to direct gas at an exit angle different from an exit angle of the plurality of gas distribution ports in a second row of the plurality of evenly distributed rows.

Advanced coating method and materials to prevent HDP-CVD chamber arcing

Embodiments described herein generally relate to a plasma processing chamber and a detection apparatus for arcing events. In one embodiment, an arcing detection apparatus is disclosed herein. The arcing detection apparatus comprises a probe, a detection circuit, and a data log system. The probe positioned partially exposed to an interior volume of a plasma processing chamber. The detection circuit is configured to receive an analog signal from the probe and output an output signal scaling events present in the analog signal. The data log system is communicatively coupled to receive the output signal from the detection circuit. The data log system is configured to track arcing events occurring in the interior volume.

Arcing detection apparatus for plasma processing

An apparatus for integrating metrology and method for using the same are disclosed. The apparatus includes a multi-chamber system having a transfer chamber, a deposition chamber, an etch chamber and a metrology chamber, and a robot configured to transfer a substrate between the deposition chamber or etch chamber and the metrology chamber.

Multi-function x-ray metrology tool for production inspection/monitoring of thin films and multidimensional structures

Embodiments of the disclosure include methods for in-situ chamber cleaning efficiency enhancement process for a plasma processing chamber utilized for a semiconductor substrate fabrication process. In one embodiment, a method for performing a plasma treatment process after cleaning a plasma process includes performing a cleaning process in a plasma processing chamber in absent of a substrate disposed thereon, subsequently supplying a plasma treatment gas mixture including at least a hydrogen containing gas and/or an oxygen containing gas into the plasma processing chamber, applying a RF source power to the processing chamber to form a plasma from the plasma treatment gas mixture, and plasma treating an interior surface of the processing chamber.

Plasma treatment process for in-situ chamber cleaning efficiency enhancement in plasma processing chamber

The present invention is one or more implementations is a method of fabricating a semiconductor for improved oxide thickness control, defining a process tool, determining and evaluating performance variables, determining a performance impact factor and thereafter modifying control of the process tool in the fabrication process to operate in direct relation to the determined results of the present invention. The present invention sets forth definitive advantages in reducing engineering time, improving process controls and improving cycle-times.

System and method for matching silicon oxide thickness between similar process tools

Embodiments of the present invention provide structures for reducing erosion of a slit valve utilized in the fabrication of semiconductor devices. Specifically, non-metallic slit valve components such as a compressible sealing member and a barrier that assist in sealing the valve closure against the slit valve seat, are positioned on the valve seat rather than on the valve closure. This orientation removes the seal and the seal barrier from the direct line of sight of the plasma within the processing chamber, reducing exposure of the sealing member and seal barrier slit valve components to erosion and thereby extending the lifetime of the valve.

Growing community of inventors

San Jose, CA, United States of America

Andrew V Le