Ostendo Technologies, Inc.

Andrew Teren

Hussein S El-Ghoroury

Kameshwar Yadavalli

Qian Fan

Gregory Batinica

JeongHyuk Park

Clarence Crouch

A multilayer light emitting device having a plurality of low Si&#x2014;H bonding dielectric layers is disclosed for improved p-GaN contact performance. Improved p-side contact resistance is provided using one or more bonding, via or passivation layers in a multilayer light emitting structure by the use of processes and dielectric materials and precursors that provide dielectric layers with a hydrogen content of less than 13 at. %.

III-V light emitting device having low Si&#x2014;H bonding dielectric layers for improved P-side contact performance

Solid state light emitting micropixels array structures having hydrogen barrier layers to minimize or eliminate undesirable passivation of doped GaN structures due to hydrogen diffusion.

Device and method for III-V light emitting micropixel array device having hydrogen diffusion barrier layer

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Carlsbad, CA, United States of America

Andrew Teren